Luminescence improvement of SrS:Ce thin films by rapid thermal annealing: Evidence of energy-transfer model for SrS:Ce electroluminescent devices

Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 7958-7964

  Wang, C W ^a   Horng, R H ^b   Wuu, D S ^b   Huang, B C ^a  

^a I SHOU UNIVERSITY   (Taiwan)

^b DA YEH UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042828485     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367977     Document Type: Article

References (36)

1. Y. A. Ono, M. Fuyama, K. Onisawa, K. Tamura, and M. Ando, J. Appl. Phys. 66, 5564 (1989).
2. B. Huttl, K. O. Vethaus, U. Troppenz, R. Herrmann, and R. H. Mauch, J. Cryst. Growth 159, 943 (1996).
3. T. J. Hsieh, R. Revay, D. Brower, P. H. Chi, D. S. Simons, D. E. Newbury, and S. W. Robey, J. Vac. Sci. Technol. A 13, 2732 (1995).
4. S. Okamoto and E. Nakazawa, Jpn. J. Appl. Phys., Part 1 34, 521 (1995).
5. W. Kong, J. Fogarty, and R. Solanki, Appl. Phys. Lett. 65, 670 (1994).
6. C. W. Wang, T. J. Sheu, Y. K. Su, and M. Yokoyama, Jpn. J. Appl. Phys., Part 1 36, 2728 (1997).
7. S. H. Sohn and Y. Hamakawa, J. Appl. Phys. 72, 2492 (1992).
8. K. Takahashi, K. Shibuya, and A. Kondo, J. Cryst. Growth 117, 979 (1992).
9. K. Onisawa, Y. Abe, T. Nakayama, and M. Hanazono, Jpn. J. Appl. Phys., Part 1 30, 314 (1991).
10. K. Onisawa, Y. Abe, K. Tamura, T. Nakayama, M. Hanazono, and Y. A. Ono, J. Electrochem. Soc. 138, 599 (1991).
11. K. Okamoto and K. Hanaoka, Jpn. J. Appl. Phys., Part 2 27, L1923 (1988).
12. S. Tanaka, V. Shanker, M. Shiki, H. Deguchi, and H. Kobayashi, in Digest of the 1985 SID International Symposium, Orlando (Society for Information Display, Playa del Rey, CA, 1985), p. 218.
13. H. Ohnishi and T. Okuda, in Digest of the 1989 SID International Symposium, Baltimore (Society for Information Display, Playa del Rey, CA, 1989), p. 317.
14. P. Soininen, E. Nykanen, M. Leskela, and L. Ninisto, Proceedings of the 13th International Display Research Conference, Strasbourg (Society for Information Display, Playa del Rey, CA, SID, Paris, France, 1993), p. 511.
15. Y, Chubachi and K. Aoyama, J. Electrochem. Soc. 139, 2677 (1992).
16. R. H. Mauch, K. O. Velthaus, G. Bilger, and H. W. Schock, J. Cryst. Growth 117, 964 (1992).
17. K. Ohmi, K. Fujimoto, S. Tanaka, and H. Kobayashi, J. Appl. Phys. 78, 428 (1995).
18. S. Okamoto, T. Kuki, and T. Suzuki, Jpn. J. Appl. Phys., Part 1 32, 1672 (1993).
19. K. Onisawa, M. Fuyama, K. Taguchi, K. Tamura, and Y. A. Ono, J. Electrochem. Soc. 135, 2631 (1988).
20. Y. Abe, K. Onisawa, Y. A. Ono, and M. Hanazono, Jpn. J. Appl. Phys., Part 1 29, 1495 (1990).
21. A. Mikami, T. Ogura, K. Taniguchi, M. Yoshida, and S. Nakajima, J. Lumin. 40/41, 784 (1988).
22. T. D. Thompson and J. W. Allen, J. Cryst. Growth 101, 981 (1990).
23. D. C. Krupka, J. Appl. Phys. 43, 476 (1972).
24. V. P. Singh and D. C. Morton, IEEE Trans. Electron Devices 39, 1331 (1992).
25. A. Aguilera, V. P. Singh, and D. C. Morton, Soc. Inf. Display Dig. SID94, 565 (1994).
26. S. Bhaskaran, V. P. Singh, and D. C. Morton, IEEE Trans. Electron Devices 42, 1756 (1995).
27. S. Bhaskaran, V. P. Singh, J. C. Moclure, and D. C. Morton, Soc. Inf. Display Dig. SID94, 133 (1994).
28. R. H. Horng, D. S. Wuu, J. W. Yu, and C. Y. Kung, Thin Solid Films 289, 234 (1996).
29. D. V. Lang, J. Appl. Phys. 45, 3014 (1974).
30. H. Yoshiyama, S. Tanaka, Y. Mikami, S. Ohshio, J. Nishiura, H. Kawakami, and H. Kobayashi, J. Cryst. Growth 86, 56 (1988).
31. D. Poelman, R. Vercaemst, R. L. V. Veirhaeghe, W. H. Laflere, and F. Cardon, Jpn. J. Appl. Phys., Part 1 32, 3477 (1993).
32. B. Huttl, U. Troppenz, K. O. Velthaus, C. R. Ronda, and R. H. Mauch, J. Appl. Phys. 78, 7282 (1995).
33. R. Tornqvist and S. Korpela, J. Cryst. Growth 59, 395 (1982).
34. T. Katsube, K. Kakimoto, and T. Ikoma, J. Appl. Phys. 52, 3504 (1981).
35. W. D. Eades and R. M. Sghjwanson, J. Appl. Phys. 56, 1744 (1984).
36. K. Yamasaki and T. Sugano, Appl. Phys. Lett. 35, 932 (1979).