Deep traps and mechanism of brightness degradation in Mn-doped ZnS thin-Film electroluminescent devices grown by metal-Organic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 5 A, 1997, Pages 2728-2732

  Wang, Ching Wu ^a   Sheu, Tong Ji ^a   Su, Yan Kuin ^b   Yokoyama, Meiso ^b  

^a Kaohsiung Polytechnic Institute Taiwan   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Brightness degrataion; DLTS; Electroluminescent devices; FTIR; MOCVD; ZnS:Mn

Indexed keywords

BRIGHTNESS DEGRADATION; ELECTRON TRAPPING;

DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTROLUMINESCENCE; ELECTRONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LUMINESCENT DEVICES; MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOSPHORS; PHOTOLUMINESCENCE; X RAY CRYSTALLOGRAPHY; ZINC SULFIDE;

THIN FILM DEVICES;

EID: 0031144104     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2728     Document Type: Article

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