1/f noise in large-area Hg1-xCdxTe photodiodes

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 633-638

  D'Souza, A I ^a   Stapelbroek, M G ^a   Dolan, P N ^a   Wijewarnasuriya, P S ^b   DeWames, R E ^b   Smith, D S ^c   Ehlert, J C ^c  

^a DRS Sensors and Targeting Systems Inc   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

^c ITT Industries   (United States)

Author keywords

1 f Noise; Hg1 xCdxTe detectors; Molecular beam epitaxy (MBE); Photodiodes

Indexed keywords

HETEROJUNCTIONS; INFRARED RADIATION; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; SENSITIVITY ANALYSIS; SPURIOUS SIGNAL NOISE;

DIFFUSION CURRENT;

PHOTODIODES;

EID: 0042768043     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0044-z     Document Type: Conference Paper

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