Long term stability of gate-oxides on n- and p-type silicon carbide studied by charge injection techniques

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 263-266

  Stein Von Kamienski, E G ^a   Leonhard, C ^a   Portheine, F ^a   Golz A ^a   Kurz, H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Charge injection techniques; Gate oxides; Metal oxide semiconductor

Indexed keywords

HYDROGEN; PASSIVATION; SEMICONDUCTOR DOPING; SILICON CARBIDE;

CHARGE INJECTION; FOWLER-NORDHEIM TECHNIQUE; GATE OXIDES;

HETEROJUNCTIONS;

EID: 0042878085     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(96)01987-3     Document Type: Article

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