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Volumn 77, Issue 14, 2000, Pages 2139-2141

Stress-induced anisotropy of phosphorous islands on gallium arsenide

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0042704513     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1314290     Document Type: Article
Times cited : (4)

References (20)
  • 2
    • 0003583926 scopus 로고
    • American Institute of Physics, New York
    • In Molecular Beam Epitaxy, edited by A. Y. Cho (American Institute of Physics, New York, 1994).
    • (1994) Molecular Beam Epitaxy
    • Cho, A.Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.