A highly integrated Si/SiGe BiCMOS upconverter RFIC for 3G WCDMA handset applications

European Solid-State Circuits Conference

Volumn , Issue , 2002, Pages 447-450

  Chominski, Paul ^a   Malhi, Duljit ^a   Larson, Lawrence ^b   Park, Joshua ^a   Gudem, Prasad ^a   Kloczkowski, Robert ^a   Demirdag, Cuneyt ^a   Garlapati, Akhil ^a   Pereira, Victoria ^a  

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANGE; EXTERNAL FILTERS; FREQUENCY PLAN; HETERODYNE ARCHITECTURE; INTEGRATED TRANSMITTER; MOBILE TERMINAL; POWER SUPPLY; SIGE BICMOS TECHNOLOGY;

BICMOS TECHNOLOGY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; TRANSMITTERS;

SEMICONDUCTING SILICON;

EID: 0042661397     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. http://www.3gpp.org
2. A. Bellaour, et al, "A highly integrated SiGe BiCMOS WCDMA transmitter IC," IEEE 2002 Intl. Solid-State Circuits Conference, San Francisco, pp. 238-239.
3. G. Brenna, et al, "A 2 Ghz Direct-Conversion WCDMA modulator in 0.25 m CMOS," IEEE 2002 Intl. Solid-State Circuits Conference, San Francisco, pp. 244-245.
4. D. Su, et al, "A 5 GHz Transceiver for 802.11a Wireless LAN," IEEE 2002 Intl. Solid-State Circuits Conference, San Francisco, pp. 92-93.
5. S. Otaka, et al, " A low-power low-noise accurate linear-indB variable-gain amplifier with 500-MHz bandwidth," IEEE Journal of Solid-State Circuits, vol.35, (no.12), Dec. 2000. pp.1942-8.
6. H. Joba, et al, "W-CDMA SiGe TX-IC with high dynamic range and high power control accuracy," Accepted in IEEE IMS2002.
7. S. Subbanna, et al, "Integration and design issues in combining very-high-speed silicon-germanium bipolar transistors and ULSI CMOS for system-on-A-chip applications," International Electron Devices Meeting, 1999, pp.845-8.