A novel (8 × 4) superstructure as precursor to the c(4 × 4) phase during Sb/Si(0 0 1) desorption

Surface Science

Volumn 540, Issue 2-3, 2003, Pages

  Paliwal, Vinod Kumar ^a,b   Vedeshwar, A G ^b   Shivaprasad, S M ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

Adsorption kinetics; Antimony; Auger electron spectroscopy; Electron energy loss spectroscopy (EELS); Epitaxy; Low energy electron diffraction (LEED); Metal semiconductor interfaces; Silicon

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DESORPTION; ELECTRON ENERGY LOSS SPECTROSCOPY; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; MULTILAYERS; REACTION KINETICS; SEMICONDUCTING ANTIMONY; SINGLE CRYSTALS; SURFACE STRUCTURE;

ADSORPTION KINETICS;

SEMICONDUCTING SILICON;

EID: 0042661112     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00847-1     Document Type: Article

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