Ab initio calculation of geometry and bonding for overlaid and inlaid models of Si(001)/Sb(0.25 ML)-c(4 × 4)

Surface Science

Volumn 402-404, Issue , 1998, Pages 645-648

  Jenkins, S J ^a   Srivastava, G P ^a   Dixon, R J ^b   McConville, C F ^b  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Antimony; Density functional calculations; Low index single crystal surfaces; Semiconducting surfaces; Silicon; Surface electronic phenomena; Surface relaxation and reconstruction

Indexed keywords

CHEMICAL BONDS; FREE ENERGY; MATHEMATICAL MODELS; MONOLAYERS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE PHENOMENA;

DENSITY FUNCTIONAL CALCULATIONS; SURFACE RECONSTRUCTION; SURFACE RELAXATION;

SURFACE STRUCTURE;

EID: 0031627987     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00925-4     Document Type: Article

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