A simple method for determining the restrictive conditions for the formation of stacking faults for the relief of pseudomorphic strain in face centered cubic epilayers

Journal of Crystal Growth

Volumn 162, Issue 3-4, 1996, Pages 178-181

  Pashley, D W ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); PLASTIC DEFORMATION; STACKING FAULTS; STRAIN;

EPITAXIAL LAYER; EPITAXIAL STRAIN RELIEF; FACE CENTERED CUBIC EPILAYERS; PARTIAL DISLOCATION; PSEUDOMORPHIC STRAIN;

CRYSTAL GROWTH;

EID: 0030144368     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00960-4     Document Type: Article

References (5)

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3. E.P. Kvam and R. Hull, J. Appl. Phys. 73 (1993) 7407.
4. T.T. Cheng, M. Aindow, I.P. Jones, I.P. Hails, D.J. Williams and J. Astles, J. Crystal Growth 135 (1994) 409.
5. X.L. Wei and M. Aindow, Appl. Phys. Lett. 65 (1994) 1903.