MOCVD growth of high quality GaN-AlGaN based structures on Al2O3 substrates with dislocation density less than 107 cm-2

Journal of the European Ceramic Society

Volumn 17, Issue 15-16, 1997, Pages 1781-1785

  Kung, P ^a   Zhang, X ^a   Saxler, A ^a,b   Walker, D ^a   Razeghi, M ^a   Qian, W ^c   Dravid, V P ^a  

^a Northwestern University   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042638197     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0955-2219(97)00076-9     Document Type: Article

References (13)

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