Magnetic microsensors: Technology, properties, application

Sensors and Actuators, A: Physical

Volumn 68, Issue 1-3, 1998, Pages 282-285

  Bolshakova, Inessa ^a  

^a LVIV POLYTECHNIC NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Hall effect; III V semiconductors; Magnetic microsensors; Microcrystals; Probes

Indexed keywords

HALL EFFECT; MAGNETIC FIELD MEASUREMENT; MAGNETIC FIELDS; PROBES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

MAGNETIC INDUCTION; MAGNETIC MICROSENSORS; MICROCRYSTALS;

SENSORS;

EID: 0042638146     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(98)00018-1     Document Type: Article

References (7)

1. V. Voronin, I. Maryamova, Y. Zaganyach, E. Karetnikova, A. Kutrakov, Silicon whiskers for mechanical sensors, Sensors and Actuators A 30 (1992) 27-33.
2. R.I. Baitsar, S.S. Varshava, E.P. Krasnogenov, A.S. Ostrovskaya, Electromechanical, photoelectric, and thermistor transducers from Si-Ge single crystals, Inorganic Mater. 32 (1996) 696-699.
3. A.I. Klimovskaya, I.P. Ostrovskii, A.S. Ostrovskaya, Influence of growth conditions on morphology, composition, and electrical properties of n-Si wires, Phys. Stat. Solidi (a) 153 (1996) 465-471.
4. J. Weyher, Some notes of the growth kinetics and morphology of VLS silicon crystals grown with platinum and gold as liquid-forming agents, J. Cryst. Growth 43 (1978) 235-244.
5. Lake Shore Cryotronics, Inc., Magnetic Measurement, Catalog, Williamsville, OH, USA, 1996.
6. I.A. Bolshakova, T.A. Moskovets, I.P. Ostrovskii, A.S. Ostrovskaya, A.I. Klimenko, Modeling of InSb and InAs whiskers growth, Comput. Mater. Sci. 569 (1997) 1-4.
7. D.L. Rode, Electron transport in InSb, InAs and InP, Phys. Rev. B 3 (1971) 3287-3299.