Electromechanical, photoelectric, and thermistor transducers from Si-Ge single crystals

Inorganic Materials

Volumn 32, Issue 7, 1996, Pages 696-699

  Baitsar, R I ^a   Varshava, S S ^a   Krasnozhenov, E P ^a   Ostrovskaya, A S ^a  

^a LVIV POLYTECHNIC NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042256701     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. Abstracts of Papers, VIII Koordinatsionnoe soveshchanie po issledovaniyu i primeneniyu splavov Si-Ge (VIII Coordination Conf. on the Investigation and Application of Si-Ge Alloys), Tashkent, 1991.
2. Givargizov, E.I., Rost nitevidnykh i plastinchatykh kristallov iz para (Vapor Growth of Acicular and Plate-like Crystals), Moscow: Nauka, 1977.
3. Ostrovskaya, A.S., Baitsar, R.I., and Ostrovskii, I.P., Growth of Si-Ge Acicular Crystals for String Sensors, Shkola-seminar po relaksatsionnym yavleniyam v tverdykh telakh (Workshop on Relaxation Processes in Solids), Voronezh, 1993, p. 156.
4. Varshava, S.S., Ostrovskaya, A.S., and Baitsar, R,I., Morphology, Structure, and Properties of Silicon-Germanium Acicular Crystals, Ukr. Fiz. Zh. (Russ. Ed.), 1994, vol. 39, no. 2, pp. 230-233.
5. Bakirov, M.Ya., Elektronnye pribory na osnove tverdogo rastvora Si-Ge (Si-Ge Electronic Devices), Baku: Elm, 1986.
6. Gurevich, Yu.G. and Yurchenko, V.B., A New Group of Photoelectric Effects in Silicon-Germanium Graded Structures, VIII Koordinatsionnoe soveshchanie po issledovaniyu i primeneniyu splavov Si-Ge (VIII Coordination Conf. on the Investigation and Application of Si-Ge Alloys), Tashkent, 1991, p. 21.
7. Novokreshchenova, E.P., Drozhzhin, A,I., Kreichik, R,N., and Shchetinin, A.A., Sozdanie i issledovanie svoistv tokovykh kontaktov k nitevidnym kristallam kremniya n-tipa (Fabrication and Characteristics of Current Leads to Acicular Crystals of n-Type Silicon), Available from VINITI, 1986, Voronezh, no. 7468-V86.
8. Baitsar, R.I., Varshava, S.S., Potapchuk, G.N., and Chekurin, V.F., New Thermistor Anemometers Based on Acicular Crystals, Prib. Tekh. Eksp., 1994, no. 3, pp. 158-163.
9. Novikov, A.A., Baitsar, R.I., and Reshetilo, A.P., Temperature-Measuring Microelements Based on Thermistors Made from Acicular Crystals, Prib. Sist. Upr., 1980, no. 3, p. 31.
10. Baitsar, R.I., Measuring Transducers of Mechanical Quantities Based on Thermistors Made from Acicular Crystals, Vsesoyuznaya konferentsiya po nitevidnym kristallam dlya novoi tekhniki (All-Union Conf. on the Application of Acicular Crystals in New Technologies), Voronezh, 1979, pp. 177-180.
11. Kalinin, S.G., Krasnozhenov, E.P., Baitsar, R.I., et al., USSR Inventor's Certificate no. 960 634, Byull. Izobret., 1982, no. 35, p. 42.