CMOS large signal model for CAD

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 643-646

  Angelov, I ^a   Fernhdal, M ^a   Ingvarson, F ^a   Zirath, H ^a,b   Vickes, H O ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Ericsson Microwave Systems AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; NONLINEAR NETWORKS; SCATTERING PARAMETERS;

POWER SPECTRUM MEASUREMENTS;

CMOS INTEGRATED CIRCUITS;

EID: 0042594500     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. P. Antognetti and G. Masobrio, Semiconductor Device Modeling with SPICE, McGraw Hill, 1988.
2. Official web site of BSIM3 model development group. http: www-device.EECS.Berkeley.EDU/bsim3
3. G. Dambrine, A. Cappy..."A new Method for Determining the FET Small-Signal Equivalent Circuit", IEEE Trans. MTT, vol.36, pp.1151-1159, July 1988.
4. C.R. Iversen, "An Embedded MOS Model 9 for CMOS RF Circuit design", Microwave Journal, Nov.2001, pp22-40
5. E. P. Vandame, D. Schreurs, C. van Dinter,G. Badenes, "Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIMv3 compact model", Solid State Electronics 46,2002,353-360
6. D. R. Pehlke, M. Schroter, A. Burstein.." High-Frequency Application of MOS Compact Models and their Development for Scalable RF Model Libraries, IEEE 1998 Custom Integrated Circuit Conference, pp 219-222.
7. I. Angelov. et al "Extensions of the Chalmers nonlinear transistor model", MTT-v.44, pp. 1664-1674, Oct.1996