An embedded MOS model 9 for CMOS RF circuit design

Microwave Journal

Volumn 44, Issue 11, 2001, Pages

  Iversen, Christian Rye ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INTERMODULATION PRODUCTS; RADIO FREQUENCY CIRCUIT;

CAPACITORS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; EMBEDDED SYSTEMS; INTEGRATED CIRCUIT LAYOUT; INTERMODULATION; MOSFET DEVICES; RESISTORS; SEMICONDUCTOR DIODES;

SEMICONDUCTOR DEVICE MODELS;

EID: 0035517725     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (10)

1. CMOS RF integrated circuits at 5 GHz and beyond
2. A single-chip 900 MHz spread-spectrum wireless transceiver in 1 μm CMOS
3. A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation
4. An analytical MOS transistor model valid in all regions of operation and dedicated to low voltage and low current applications
5. MOS transistor modeling for RF IC design
6. Consistent layout techniques for successful RF CMOS design
7. Ground-shielded measuring technique for accurate on-wafer characterization of RF CMOS devices
8. A four-step method for de-embedding gigahertz on-wafer CMOS measurements