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Volumn 2, Issue , 2003, Pages 1287-1290

High-Q RF inductors on standard silicon realized using wafer-level packaging techniques

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONICS PACKAGING; NATURAL FREQUENCIES; PASSIVATION; Q FACTOR MEASUREMENT; SILICON WAFERS;

EID: 0042593026     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (8)
  • 1
    • 0033280207 scopus 로고    scopus 로고
    • High Q inductors in a SiGe BiCMOS process utilizing a thick metal process add-on module
    • Minneapolis, MN, Sept, 26-28
    • R. Groves, et al., "High Q inductors in a SiGe BiCMOS process utilizing a thick metal process add-on module," IEEE BCTM, Minneapolis, MN, pp. 149-152, Sept, 26-28, 1999.
    • (1999) IEEE BCTM , pp. 149-152
    • Groves, R.1
  • 2
    • 0038480027 scopus 로고    scopus 로고
    • Integrated inductors
    • to be published by IEEE Press, ISBN 0471244317, chapter 10
    • G. Carchon, et al., "Integrated Inductors," in Integrated Passive Component Technology, to be published by IEEE Press, ISBN 0471244317, 2003, chapter 10.
    • (2003) Integrated Passive Component Technology
    • Carchon, G.1
  • 3
    • 0036541802 scopus 로고    scopus 로고
    • Add-on Cu/SILK module for high Q inductors
    • S. Jenei, et al. "Add-on Cu/SILK Module for High Q inductors," IEEE Electron Device Letters, vol. 23, pp. 173-175, 2002.
    • (2002) IEEE Electron Device Letters , vol.23 , pp. 173-175
    • Jenei, S.1
  • 4
    • 0035367202 scopus 로고    scopus 로고
    • Post-processed inductors with application to a completely integrated 2 GHz VCO
    • J. Rogers, et al., "Post-processed inductors with application to a completely integrated 2 GHz VCO," IEEE Trans. on Electron Devices, vol. 48, pp. 1284-1287, 2001.
    • (2001) IEEE Trans. on Electron Devices , vol.48 , pp. 1284-1287
    • Rogers, J.1
  • 5
    • 0036713966 scopus 로고    scopus 로고
    • Silicon-based high-Q inductors incorporating electroplated copper and low-K. BCB dielectric
    • X. Huo, et al., "Silicon-based high-Q inductors incorporating electroplated copper and low-K. BCB dielectric," IEEE Electron Device Letters, vol. 23, pp. 520-522, 2002.
    • (2002) IEEE Electron Device Letters , vol.23 , pp. 520-522
    • Huo, X.1
  • 6
    • 0036450056 scopus 로고    scopus 로고
    • High-Q inductors on low resistivity silicon through wafer post-processing
    • Denver
    • G. Carchon, et al., "High-Q inductors on low resistivity silicon through wafer post-processing," IMAPS Denver, pp. 604-609, 2002.
    • (2002) IMAPS , pp. 604-609
    • Carchon, G.1
  • 7
    • 0002083650 scopus 로고    scopus 로고
    • Multi-layer thin film MCM-D for the integration of high-performance wireless front-end systems
    • G. Carchon, et al., "Multi-layer thin film MCM-D for the integration of high-performance wireless front-end systems," Microwave Journal, vol. 44, pp. 96-110, 2001.
    • (2001) Microwave Journal , vol.44 , pp. 96-110
    • Carchon, G.1
  • 8
    • 0032075292 scopus 로고    scopus 로고
    • On-chip spiral inductors with patterned ground shields for Si-based RF IC's
    • C. P. Yue and S. S. Wong, "On-chip spiral inductors with patterned ground shields for Si-based RF IC's," IEEE Journal of Solid-State Circuits, vol. 33, pp. 743-752, 1998.
    • (1998) IEEE Journal of Solid-state Circuits , vol.33 , pp. 743-752
    • Yue, C.P.1    Wong, S.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.