A single-chip 24 GHz receiver front-end using a commercially available SiGe HBT foundry process

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2002, Pages 159-162

  Sonmez E ^a   Trasser, A ^a   Schad, K B ^a   Abele, P ^a   Schumacher, H ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER CIRCUITS; FOUNDRY PRACTICE; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; OSCILLATORS (ELECTRONIC); SIGNAL RECEIVERS; SILICON COMPOUNDS;

LOCAL OSCILLATORS (LO);

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0036313403     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Coplanar and microstrip oscillators in SiGe SIMMWIC technology
2. 24 GHz SiGe-MMIC oscillator realized with lumped elements in a production line
3. SiGe transistor technology for RF applications
4. SiGe technology and components for mobile communications systems
5. High power compact 16 GHz integrated oscillator design using active reactances
6. High power ultra compact VCO with active reactance concepts at 24 GHz