A silicon bipolar technology for high-efficiency power applications up to C-band

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2003, Pages 155-158

  Biondi, Tonio ^a   Carrara, Francesco ^a   Scuderi, Antonino ^b   Palmisano, Giuseppe ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ENERGY EFFICIENCY; SEMICONDUCTING SILICON;

SILICON BIPOLAR TECHNOLOGY;

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 0042591229     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. J. Böck et al., "12 ps implanted base silicon bipolar technology" in IEEE Int. Electron Devices Meeting Tech. Dig., Dec. 1999, pp. 553-556.
2. H.G.A. Huizing et al., "Large signal RF behaviour of low supply voltage (< 3.5 V) bipolar junction transistors" in Pros. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Aug. 2000, pp. 82-85.
3. W. Simbürger et al., "A monolithic 2.5 V, 1 W silicon bipolar amplifier with 55% PAE at 1.9 GHz," in IEEE MTTS Int. Microwave Symp. Dig., June 2000, pp. 853-856.
4. F. Carrara, A. Scuderi, G. Tontodonato, and G. Palmisano, "A very high efficiency silicon bipolar transistor" in IEEE Int. Electron Devices Meeting Tech. Dig., Dec. 2001, pp. 883-886.
5. F.H. Raab, "Class-F power amplifiers with maximally flat waveforms," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 2007-2012, Nov. 1997.
6. T. Biondi, F. Carrara, A. Scuderi, and G. Palmisano, "Degradation of the DC current capability in long-emitter bipolar transistors" in Proc. IEEE Int. Conf. on Electronics, Circuits and Systems, Sept. 2002.
7. D. Cell, "BIT Model Equations," STMicroelectronics Technical Report, Oct. 1989.