Incorporation of thallium in InTlAs and GaTlAs grown by molecular beam epitaxy

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 125-130

  Lubyshev, D I ^a   Cai, W Z ^a   Catchen, G L ^b   Mayer, T S ^a   Miller, D L ^a  

^a The Pennsylvania State University   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; AUGERS; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; TEMPERATURE; THALLIUM; X RAY DIFFRACTION;

FLUX RATIO; INDUCED STRUCTURES; LOW TEMPERATURE GROWTH; METAL PHASE; MOLAR FRACTIONS; SOLID SOURCES; SUBSTRATE TEMPERATURE; X-RAY DIFFRACTION MEASUREMENTS;

GALLIUM COMPOUNDS;

EID: 0042566039     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711578     Document Type: Conference Paper

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