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Volumn 16, Issue 3, 1998, Pages 1721-1724

Investigation of Ge on Si(100) quantum wells by photoelectron spectroscopies

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Indexed keywords


EID: 0042529630     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590042     Document Type: Article
Times cited : (2)

References (18)
  • 7
    • 35248858533 scopus 로고
    • C. G. Van de Walle and R. Martin, Phys. Rev. B 34, 5621 (1986); C. G. Van de Walle, in Properties of Strained and Relaxed Silicon Germanium, EMIS Data Review Series by E. Kasper (Inspec, London, 1995), Vol. 12.
    • (1986) Phys. Rev. B , vol.34 , pp. 5621
    • Van De Walle, C.G.1    Martin, R.2
  • 8
    • 35248858533 scopus 로고
    • EMIS Data Review Series by E. Kasper Inspec, London
    • C. G. Van de Walle and R. Martin, Phys. Rev. B 34, 5621 (1986); C. G. Van de Walle, in Properties of Strained and Relaxed Silicon Germanium, EMIS Data Review Series by E. Kasper (Inspec, London, 1995), Vol. 12.
    • (1995) Properties of Strained and Relaxed Silicon Germanium , vol.12
    • Van De Walle, C.G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.