Low-energy yield spectroscopy determination of band offsets: Application to the epitaxial Ge/Si(100) heterostructure

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 595-600

  Di Gaspare, L ^a   Capellini, G ^a   Chudoba, C ^a   Sebastiani, M ^a   Evangelisti, F ^a  

^a ROMA TRE UNIVERSITY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); PHOTOELECTRICITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; ULTRAVIOLET SPECTROSCOPY;

PHOTOELECTRIC YIELD SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0030234017     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00208-5     Document Type: Article

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