S-parameter formulation of quality factor for a spiral inductor in generalized two-port configuration

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2003, Pages 255-258

  Horng, T S ^a   Peng, K C ^a   Jau, J K ^a   Tsai, Y S ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ENERGY DISSIPATION; FREQUENCIES; MATHEMATICAL MODELS; MIM DEVICES;

SPIRAL INDUCTORS;

ELECTRIC INDUCTORS;

EID: 0042524587     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. C.P. Yue and S.S. Wong, "On-chip spiral inductors with patterned ground shields for Si-based RFIC's," IEEE J. Solid-State Circuits, vol. 33, pp. 743-752, May 1998.
2. K.O, "Estimation methods for quality factors of inductors fabricated in silicon integrated circuit process technologies," IEEE J. Solid-State Circuits, vol. 33, pp. 1249-1252, Aug. 1998.
3. H. Jiang, Y. Wang, J.A. Yeh, and N.C. Tien, "On-chip spiral inductors suspended over deep copper-lined cavities," IEEE Trans. Microwave Theory and Tech., vol. 48, pp. 2415-2423, Dec. 2000.
4. Y.E. Chen, D. Heo, J. Laskar, and T. Andersen, "Investigation of Q enhancement for inductors processed in BiCMOS technology," in Proc. IEEE RAWCON, 1999, pp. 263-266.
5. K. Naishadham and T. Durak, "Measurement-based closed-form modeling of surface-mounted RF components," IEEE Trans. Microwave Theory Tech. vol. 50, pp. 2276-2286, Oct. 2002.