Chapter 5.3 Spatial Correlations of Impurity Charges in Doped Semiconductors

Semiconductors and Semimetals

Volumn 54, Issue C, 1998, Pages 485-512

  Suski, Tadeusz ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DOPED SEMICONDUCTORS; SPATIAL CORRELATIONS;

EID: 0042477431     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)60235-5     Document Type: Article

References (46)

1. Shockley W. Problems related to p-n junctions in silicon. Solid State Electron. 2 (1961) 35-67
2. Shklovskii B.I., and Efros A.L. Electronic Properties of Doped Semiconductors (1984), Springer, New York 303
3. Gerlach E., and Rautenberg M. Ionized impurity scattering in semiconductors. Phys. Stat. Soi.(b) 86 (1978) 479-482
4. Schubert E.F. Delta-doping of semiconductors: Electronic optical and structural properties of materials and devices. In: Gossard A.C. (Ed). Semiconductors and Semimctals 40 (1994), Academic Press, New York 2-151
5. Baranovskii S.D., Efros A.L., Gelmont B.L., and Shklovskii B.I. Coulomb gap in disordered systems: computer simulations. J. Phys. C 12 (1979) 1023-1034
6. Davies J.H., Lee P.A., and Rice T.M. Properties of the electron gas. Phys. Rev. B 29 (1984) 4260-4271
7. Kossut J., Wilamowski Z., Dietl T., and Swiatek K. Spatial correlation of impurity charges in doped semiconductors. In: Anastassakis E.M., and Joannopoulos J.D. (Eds). Proc. 20th Int. Conf. Physics of Semiconductors (1990), World Scientific, Singapore 613-620
8. Mycielski J. Solid State Commun. 60 (1986) 165
9. Tsidlikovski I.M., and Kuleyev I.G. Spatial correlations of impurity charge in gapless semiconductors. Semicond. Sci. Technol. 11 (1996) 625-640
10. Skierbiszewski C., Suski T., Litwin-Staszewska E., Dobrowolski E.W., Dybko K., and Mycielski A. The influence of hydrostatic pressure on the formation of a donor superlattice in HgSe: Fe. Semicond. Sci. Technol. 4 (1989) 293-295
11. Skierbiszewski C., Wilamowski Z., Suski T., Kossut J., and Witkowska B. Why various types of donors can either enhance or reduce electron mobility in narrow gap semiconductors. Semicond. Sci. Technol 8 (1993) S40-S43
12. Suski T. Hydrostatic pressure investigations of metastable defect states. In: Heinrich G. (Ed). Mat. Sci. Forum 143-147 (1994), Trans. Tech. Publications, Switzerland 975-982
13. Chadi D., and Chang K. Theory of the atomic and electronic structure of DX centers in GaAs and AlGaAs alloys. Phys. Rev. Lett. 61 (1988) 873-876
14. Baj M., Dmowski L.H., and Slupinski T. Direct proof of two-electron occupation of Ge-DX centers in GaAs codoped with Ge and Te. Phys. Rev. Lett. 71 (1993) 3529-3532
15. Mizuta M., Tachikawa M., Kukimoto H., and Minomura S. Direct evidence for the DX center being a substitutional donor in AlGaAs alloy system. Jpn. J. Appl. Phys. 24 (1985) L143-L146
16. Dmochowski J.E., Wang P.D., Stradling R.A., and Trzeciakowski W. High pressure studies of electronic states with small lattice relaxation of DX-centres in GaAs. In: Stavola M. (Ed). Mat. Sci. Forum 83-87 (1992), Trans. Tech. Publications, Switzerland 751-756
17. Suski T., Piotrzkowski R., Wisniewski P., Litwin-Staszewska E., and Dmowski L. High pressure and DX centers in heavily doped bulk GaAs. Phys. Rev. B 40 (1989) 4012-4021
18. O'Reilly E.P. Pressure dependence of DX center mobility in highly doped GaAs. Appl. Phys. Lett. 55 (1989) 1409-1411
19. Dietl T., Dmowski L., Kossut J., Litwin-Staszewska E., Piotrzkowski R., Suski T., Swiatek K., and Wilamowski Z. Inter-donor interactions - source of electron mobility increase under pressure. Acta Phys. Polon. A 77 (1990) 29-32
20. Sobkowicz P., Wilamowski Z., and Kossut J. Monte Carlo simulations of spatial correlation effects of charged centres in δ-doping layers. Semicond. Sci. Technol. 7 (1992) 1155-1161
21. Suski T., Wisniewski P., Litwin-Staszewska E., Kossut J., Wilamowski Z., Dietl T., Swiatek K., Ploog K., and Knecht J. Pressure dependence of electron mobility in GaAs: Si - effects of on-site and inter-site interactions within a system of DX centres. Semicond. Sci. Technol. 5 (1990) 261-264
22. Jantsch W., Wilamowski Z., and Ostermayer G. Intra- and inter-defect electronic correlation in III-V semiconductors. Phys. Scr. T45 (1992) 140-144
23. Dmowski L.H., Goutiers B., Maude D.K., Eaves L., Portal J.C., and Harris J.J. Spatial correlations of occupied DX centres in GaAs and its destruction by thermal and optical excitation. Jpn. J. Appl. Phys. 32 (1993) 221-223 Suppl. 32-1
24. Suski T., Wisniewski P., Litwin-Staszewska E., Wasik D., Przybytek J., Baj M., Karczew-ski G., Wojtowicz T., Zakrzewski A., and Kossut J. Spatial correlations of In-donor charges in CdTe layers. J. Crystal Growth 159 (1996) 380-383
25. Baraldi A., Ghezzi C., Parisini A., Bosachi A., and Franchi S. Low temperature mobility of photoexicted electrons in AlGaAs containing DX centers. Phys. Rev. B 44 (1991) 8713-8721
26. Piotrzkowski R., Konczewicz L., Litwin-Staszewska E., Robert J.L., and Lorenzini P. Dependence of mobility on DX-centre configuration in GaAlAs alloy. Semicond. Sci. Technol. 6 (1991) 250-253
27. Ghezi C., Parisini A., and Dallacasa V. Electron scattering by spatially correlated DX charges. Phys. Rev. B 50 (1994) 2166-2175
28. Morgan T.N. The vacancy-interstitial model of DX centers. In: Ferenczi G. (Ed). Mat. Sci. Forum 38-41 (1989), Trans. Tech. Publications, Switzerland 1079-1084
29. Piotrzkowski R., Litwin-Staszewska E., and Robert J.L. The DX-centers related mobility in AlGaAs: charge correlation and multilevel-structure effects. In: Heinrich G. (Ed). Mat. Sci. Forum 143-147 (1994), Trans. Tech. Publications, Switzerland 1135-1140
30. Walukiewicz W., Ruda H.E., Lagowski J., and Gatos H.C. Electron mobility in modulation-doped heterostructures. Phys. Rev. B 30 (1984) 4571-4582
31. Efros A.L., Pikus F.G., and Samsonidze G.G. Maximum low temperature mobility of two-dimensional electrons in heterounctions with a thick spacer layer. Phys. Rev. B 41 (1990) 8295-8301
32. Coleridge P.T. Small angle scattering in two-dimensional electron gases. Phys. Rev. B 44 (1991) 3793-3801
33. Suski T., Wisniewski P., Gorczyca L., Dmowski L.H., Piotrzkowski R., Sobkowicz P., Smoliner J., Gornik E., Boehm G., and Weimann G. Spatial correlations of remote impurity charges: Mechanism responsible for the high mobility of a two-dimensional electron gas. Phys. Rev. B 50 (1994) 2723-2726
34. Buks E., Heiblum M., and Shtrikman H. Correlated charged donors and strong mobility enhancement in a two-dimensional electron gas. Phys. Rev. B 49 (1994) 14790-14793
35. Brunthaler G., Penn C., Suski T., Wisniewski P., Litwin-Staszewska E., and Koehler K. Influence of spatial doping correlation on scattering times studied in gated and ungated aAs/AlGaAs quantum wells under hydrostatic pressure. Solid State Electron. 40 (1996) 105-108
36. Wisniewski P., Suski T., Dmowski L.H., Gorczyca I., Sobkowicz P., Smoliner J., Gornik E., Boehm G., and Weimann G. Tuning of 2DEG mobility by modification in ordering of remote impurity charges in GaAs/AlaAs heterostructures. In: Heinrich H. (Ed). Mat. Sci. Forum 143-147 (1994), Trans. Tech. Publications, Switzerland 617-622
37. Litwin-Staszewska E., Suski T., Skierbiszewski C., Kobbi F., Robert J.L., and Mosser V. Spatial correlations of donor charges in δ-doped AlGaAs/InGaAs/GaAs structures. In: Trzeciakowski W.A. (Ed). High Pressure Science and Technology (1995), World Scientific, Singapore 654-656
38. Harrang J.P., Higgins R.J., Goodall R.K., Jay P.R., Laviron M., and Delescluse P. Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunction. Phys. Rev. B 32 (1985) 8126-8135
39. Gold A. Electronic transport properties of a two-dimensional electron gas in a silicon quantum well structure at low temperatures. Phys. Rev. B 35 (1987) 723-733
40. Dmowski L.H., Zduniak A., Litwin-Staszewska E., Contreras S., Knap W., Robert J.L., and Mosser V. Study of classical and quantum scattering times in pseudomor-phic AlGaAs/InGaAs/GaAs heterostructures by means of pressure. In: Trzeciakowski W.A. (Ed). High Pressure Science and Technology (1996), World Scientific, Singapore 657-659
41. Chang A.M. In: Prange R.E., and Girvin S.M. (Eds). The Quantum Hall Effect (1987), Springer, New York 175
42. Haug R.J., Gerhardts R.R., Klitzing V.K., and Ploog K. Effect of repulsive and attractive scattering centers on the magnetotransport properties of a two-dimensional electron gas. Phys. Rev. Lett. 59 (1987) 1349-1352
43. Furneaux J.F., and Reinecke T.L. Novel features of quantum Hall plateaus for varying interface charge. Phys. Rev. 29 (1984) 4792-4795
44. Aoki H., and Ando T. Effect of localization on the Hall conductivity in the two-dimensional systems in strong magnetic fields. Solid State Commun. 38 (1981) 1079-1082
45. Prange R.E. Quantized Hall resistance and the measurement of the fine structure constant. Phys. Rev. 23 (1981) 4802-4805
46. Wisniewski P., Suski T., Litwin-Staszewska E., Brunthaler, and Koehler K. Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure: tuning of the remote-charge correlations. Surface Sci. 361/362 (1996) 579-582