Influence of spatial doping correlation on scattering times studied in gated and ungated GaAs/AlGaAs quantum wells under hydrostatic pressure

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 105-108

  Brunthaler, G ^a   Penn, C ^a   Suski, T ^b   Wisniewski, P ^b   Litwin Staszewska, E ^b   Kohler K ^c  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; CORRELATION THEORY; HALL EFFECT; LIGHT MODULATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

CORRELATION EFFECTS; GATE VOLTAGES; LOW TEMPERATURE HALL EFFECT; QUANTUM MOBILITY; SHUBNIKOV DE HAAS MEASUREMENT; TRANSPORT MOBILITY; TWO DIMENSIONAL CARRIER CONCENTRATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029711348     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00226-X     Document Type: Article

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