Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure: Tuning of the remote-charge correlations

Surface Science

Volumn 361-362, Issue , 1996, Pages 579-582

  Wisniewski, P ^a   Suski, T ^a   Litwin Staszewska, E ^a   Brunthaler, G ^b   Kohler K ^c  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Electrical conductivity; Electrical transport measurements; Gallium arsenide; Quantum effects; Quantum wells; Semiconductor semiconductor heterostructures

Indexed keywords

CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; MAGNETIC VARIABLES MEASUREMENT; QUANTUM THEORY; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

INTEGER QUANTUM HALL PLATEAUXS; MOBILITY; QUANTUM LIFETIME; REMOTE CHARGE CORRELATIONS; SEMICONDUCTOR SEMICONDUCTOR HETEROSTRUCTURES; SINGLE PARTICLE RELAXATION TIME; TRANSPORT RELAXATION TIME;

HETEROJUNCTIONS;

EID: 0030193730     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00473-6     Document Type: Article

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