Analysis of CMOS photodiodes - Part I: Quantum efficiency

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1233-1238

  Lee, Ji Soo ^a   Hornsey, Richard I ^b   Renshaw, David ^c  

^a UNIVERSITY OF WATERLOO   (Canada)

^b YORK UNIVERSITY   (Canada)

^c UNIVERSITY OF EDINBURGH   (United Kingdom)

Author keywords

Active pixel sensor (APS); CMOS image sensor; CMOS photodiode; Edge effect; Lateral diffusion; Lateral photoresponse; Quantum efficiency

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION; IMAGE SENSORS; INTEGRATED CIRCUIT MANUFACTURE; NUMERICAL ANALYSIS; ONE DIMENSIONAL; QUANTUM EFFICIENCY; SUBSTRATES;

CMOS PHOTODIODES; HIGH LOW JUNCTION; ONE DIMENSIONAL ANALYSIS;

PHOTODIODES;

EID: 0042405185     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813232     Document Type: Article

References (29)

1. E. Fossum, "CMOS active pixel image sensors," Nuclear Instrum. Methods Phys. Res. A, no. 395, pp. 291-297, 1997.
2. H.-S. P. Wong, "Technology and device scaling considerations for CMOS imagers," IEEE Trans. Electron Devices, vol. 25, pp. 2131-2142, Dec. 1996.
3. E. Fossum, "CMOS image sensors: Electronics camera on a chip," in IEDM Tech Dig., vol. 44, 1995, pp. 17-25.
4. M. H. Crowell and E. F. Labuda, "The silicon diode array camera tube," Bell Syst. Tech. J., vol. 48, pp. 1481-1528, 1969.
5. F. van de Wiele, "Photodiode quantum efficiency," in Solid State Imaging, P. G. Jespers, F. van de Wiele, and M. H. White, Eds. Gronigen, The Netherlands: Noordhoff, 1976, pp. 47-90.
6. J. Geist and H. Baltes, "High accuracy modeling of photodiode quantum efficiency," Appl. Opt., vol. 28, no. 18, pp. 3929-3939, Sept. 1989.
7. J. Shappir and A. Kolodny, "The response of small photovoltaic detectors to uniform radiation," IEEE Trans. Electron Devices, vol.ED-24, pp. 1093-1097, Aug. 1977.
8. T. I. Kamins and G. T. Fong, "Photosensing arrays with improved spatial resolution," IEEE Trans. Electron Devices, vol. ED-25, pp. 154-159, Feb. 1978.
9. H. Holloway, "Theory of lateral-collection photodiodes," J. Appl. Phys., vol. 49, no. 7, pp. 4264-4269, July 1978.
10. S. Kirkpatrick, "Modeling diffusion and collection charge from ionizing radiation in silicon devices," IEEE Trans. Electron Devices, vol. ED-26, pp. 1742-1753, Nov. 1979.
11. H. Holloway and A. D. Brailsford, "Diffusion limited saturation current of a finite p-n junction," J. Appl. Phys., vol. 55, no. 2, pp. 446-453 Jan. 1984.
12. A. D. Brailsford and H. Holloway, "Peripheral photoresponse of a large p-n junction in a thick semiconductor," J. Appl. Phys., vol. 56, no. 4, pp. 1008-1011, Aug. 1984.
13. H. Holloway and A. D. Brailsford, "Peripheral photoresponse of a p-n junction," J. Appl. Phys., vol. 54, no. 8, pp. 4641-4656, Aug. 1983.
14. L. M. Sander, "Exact solution for the peripheral photoresponse of a p-n junction," J. Appl. Phys., vol. 57, no. 6, pp. 2057-2059, Mar. 1985.
15. H. Holloway, "Collection efficiency and crosstalk in closely spaced photodiode arrays," J. Appl. Phys., vol. 60, no. 3, pp. 1091-1096, Aug. 1986.
16. J. S. Lee and R. I. Hornsey, "Photoresponse of photodiode arrays for solid-state image sensors," J. Vac. Sci. Technol. A, vol. 18, no. 2, pp. 621-625, 2000.
17. F. C. Ellot, "Geometric design of linear array detectors," IEEE Trans. Electron Devices, vol. ED-21, pp. 613-616, Oct. 1974.
18. D. H. Seib, "Carrier diffusion degradation of modulation transfer function in charge coupled imagers," IEEE Trans. Electron Devices, vol. ED-21, pp. 210-217, Mar. 1974.
19. M. M. Blouke and D. A. Robinson, "A method for improving the spatial resolution of frontside-illuminated CCDs," IEEE Trans. Electron Devices, vol. ED-28, pp. 251-256, Mar. 1981.
20. J. P. Lavine, A. E. Trabka, B. C. Burkey, T. J. Tredwell, E. T. Nelson, and C. N. Anagnostopoulos, "Steady-state photocarrier collection in silicon imaging devices," IEEE Trans. Electron Devices, vol. ED-30, pp. 1392-1394, Sept. 1983.
21. D. Levy and S. E. Schacham, "Three-dimensional analytical simulation of self- and cross-responsivities of photovoltaic detector arrays," IEEE Trans. Electron Devices, vol. ED-34, pp. 2059-2069, Oct. 1987.
22. D. Levy, S. E. Schacham, and I. Kidron, "Three-dimensional analytical model for photovoltaic detector arrays," in IEDM Tech. Dig., 1986, pp. 373-376.
23. D. Levy and S. E. Schacham, "Three-dimensional excess carrier distribution in semiconductor imaging arrays," J. Appl. Phys., vol. 64, no. 10, pp. 5230-5233, Nov. 1988.
24. J. S. Lee, R. I. Hornsey, and D. Renshaw, "Analysis of CMOS photodiodes-Part II: Lateral photoresponse," IEEE Trans. Electron Devices, vol. 50, pp. 1239-1245, May 2003.
25. E. Hecht and A. Zjac, Optics, 4th ed. Reading, MA: Addison-Wesley, 1979.
26. O. S. Heavens, Thin Film Optics. London, U.K.: Methuen, 1970.
27. Handbook of Optical Constants of Solids, E. D. Palik, Ed., Academic, New York, 1985.
28. International Technology Roadmap for Semiconductors: 1999 - Front End Processes, p. 110.
29. "Minority carrier reflecting properties of semiconductor high-low junctions," Solid-State Electron., vol. 18, pp. 715-716, 1975.