Mechanism of electron localization at edge-sharing units in amorphous SiO2

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 4, 2003, Pages

  Uchino, T ^a,b   Yoko, T ^c  

^a KOBE UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIMER; OXYGEN; SILICON DIOXIDE;

ARTICLE; CONDUCTANCE; ELECTRICITY; ELECTRON TRANSPORT; MAGNETISM; MODEL; STRUCTURE ANALYSIS; SURFACE PROPERTY;

EID: 0042338737     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.041201     Document Type: Article

References (26)

1. E. Dooryhée, J.-P. Duraud, and R. A. B. Devine, in Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide, edited by R. A. B. Devine, J.-P. Duraud, and E. Dooryhée (Wiley, Chichester, 2000), pp. 349–421.
2. P. Paillet, J. L. Leray, and H. J. von Bardeleben, in Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide, edited by R. A. B. Devine, J.-P. Duraud, and E. Dooryhée (Wiley, Chichester, 2000), pp. 293–328.
3. D. L. Griscom, in Glass-Science and Technology, edited by D. R. Uhlmann and N. J. Kreidl (Academic, San Diego, 1990), Vol. 4B, pp. 151–251.
4. P. Paillet, D. Hervé, J. L. Leray, and R. A. B. Devine, Appl. Phys. Lett. 63, 2088 (1993).
5. R. E. Stahlbush, G. J. Campisi, J. B. McKitterick, W. P. Maszara, P. Roitman, and G. A. Brown, IEEE Trans. Nucl. Sci. NS-39, 2086 (1992).
6. R. A. B. Devine, Nucl. Instrum. Methods Phys. Res. B 91, 378 (1994).
7. P. E. Blöchl and J. H. Stathis, Phys. Rev. Lett. 83, 372 (1999).
8. J. K. Rudra and W. B. Fowler, Phys. Rev. B 35, 8223 (1987).
9. D. Cerasoli, M. Bernasconi, S. Iarlori, M. Parrinello, and E. Tosatti, Phys. Rev. Lett. 84, 3887 (2000).
10. Phys. Rev. Lett. S. T. Bromley, M. A. Zwijnenburg, and Th. Maschmeyer, 90, 035502 (2003).
11. 2 and Related Dielectrics: Science and Technology, edited by G. Pacchioni, L. Skuja, and D. L. Griscom, Vol. 2 of NATO Science Series II: Mathematics, Physics and Chemistry (Kluwer, Dordrecht, 2000).
12. T. Uchino, Curr. Opin. Solid State Mater. Sci. 5, 517 (2001).
13. M. M. Francl, W. J. Pietro, W. J. Hehre, J. S. Binkley, M. S. Gordon, D. J. DeFrees, and J. A. Pople, J. Chem. Phys. 77, 3654 (1982).
14. C. Lee, W. Yang, and R. G. Parr, Phys. Rev. B 37, 785 (1988).
15. A. D. Becke, J. Chem. Phys. 98, 1372 (1993).
16. M. J. Frisch et al., computer code GAUSSIAN 98, revision A 7, Gaussian Inc., Pittsburgh, 1998.
17. G. Pacchioni and C. Mazzeo, Phys. Rev. B 62, 5452 (2000).
18. W. Jost, J. Chem. Phys. 1, 466 (1933).
19. A. H. Edwards, W. M. Shedd, and R. D. Pugh, J. Non-Cryst. Solids 289, 42 (2001).
20. D. R. Hamann, Phys. Rev. B 55, 14784 (1997).
21. B. C. Chakoumakos, R. J. Hill, and G. V. Gibbs, Am. Mineral. 66, 1237 (1981).
22. T. Uchino, Y. Kitagawa, and T. Yoko, Phys. Rev. B 61, 234 (2000).
23. G. Boureau, S. Carniato, N. Capron, J. Garapon, and B. Poumellec, J. Appl. Phys. 89, 165 (2001).
24. B. C. Bunker, D. A. Haaland, K. J. Ward, T. A. Michalske, J. S. Binkley, C. F. Melius, and C. A. Balfe, Surf. Sci. 210, 406 (1989).
25. C.-M. Chiang, B. R. Zegarski, and L. H. Dubois, J. Phys. Chem. 97, 6948 (1993).
26. T. Uchino, M. Takahashi, and T. Yoko, Appl. Phys. Lett. 80, 1147 (2002).