Electron transport coefficients in SiH4 and Si2H6 in dc and rf fields

Journal of Physics D: Applied Physics

Volumn 36, Issue 16, 2003, Pages 1936-1946

  Shimada, T ^a   Nakamura, Y ^a   Petrović, Z Lj ^a,b   Makabe, T ^a  

^a KEIO UNIVERSITY   (Japan)

^b UNIVERSITY OF BELGRADE   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPUTATIONAL FLUID DYNAMICS; COMPUTER SIMULATION; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; MATHEMATICAL MODELS; NUMERICAL METHODS; PARTIAL DIFFERENTIAL EQUATIONS; PLASMA DEVICES; PLASMAS; SILANES;

BOLTZMANN EQUATION; DIRECT NUMERICAL PROCEDURE; ELECTRON TRANSPORT COEFFICIENTS; ELECTRON VELOCITY DISTRIBUTION FUNCTION; RELAXATION CONTINUUM TECHNIQUE;

ELECTRON TRANSPORT PROPERTIES;

EID: 0042322447     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/16/304     Document Type: Article

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