Electro-thermal instability in low voltage power MOS:experimental characterization

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 233-236

  Breglio, G ^a   Frisina, F ^a   Magri, A ^a   Spirito, P ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; NEGATIVE TEMPERATURE COEFFICIENT; POSITIVE TEMPERATURE COEFFICIENT; POWER INTEGRATED CIRCUITS; RADIOMETRY; SENSORS; THERMAL EFFECTS; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

DYNAMIC THERMAL MAPPING; ELECTROTHERMAL INSTABILITIES; EMISSIVITY MAPPING; FORWARD BIAS SAFE OPERATING AREA; HOT SPOT PHENOMENON;

MOS DEVICES;

EID: 0032598907     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)