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Volumn 1, Issue , 2003, Pages 559-562

A new scaleable low frequency noise model for field-effect transistors used in resistive mixers

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; SPURIOUS SIGNAL NOISE;

EID: 0042164470     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (11)

References (18)
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  • 2
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    • B. Razavi, "Design Considerations for Direct-Conversion Receivers", IEEE Trans. Circuits Syst. II, vol. 44, no. 6, pp. 428-435, June 1997.
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  • 3
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    • A measurement based distributed low frequency noise HEMT model: Application to design of millimeter wave automotive radar chip sets
    • A. Laloue, A. Lyoubi, M. Camiade, J. C. Nallatamby, M. Valenza, M. Prigent, J. Obregon, "A Measurement Based Distributed Low Frequency Noise HEMT Model: Application to Design of Millimeter Wave Automotive Radar Chip Sets", IEEE MTT-S International, vol. 1, pp. 423-426, 2001.
    • (2001) IEEE MTT-S International , vol.1 , pp. 423-426
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  • 4
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  • 7
    • 0028546515 scopus 로고
    • Measurement and model for correlating phase and baseband 1/f noise in an FET
    • November
    • R. D. Martinez, D. E. Oates, R. C. Compton, "Measurement and Model for Correlating Phase and Baseband 1/f Noise in an FET", IEEE Trans. Microwave Theory Tech., vol. 42, no. 11, pp. 2051-2055, November 1994
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    • Martinez, R.D.1    Oates, D.E.2    Compton, R.C.3
  • 8
    • 0030212274 scopus 로고    scopus 로고
    • Analysis of noise up-conversion in microwave field-effect transistor oscillators
    • August
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  • 10
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    • 8th July
    • W. Ko, Y. Kwon, "Analytical Analysis of Noise Figures in FET Resistive Mixers", Electronics Letters, vol. 35, no. 14, pp. 1169-1170, 8th July 1999
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  • 11
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  • 16
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.