A measurement based distributed low frequency noise HEMT model: Application to design of millimeter wave automotive radar chip sets

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2001, Pages 423-426

  Laloue, A ^a   Lyoubi, A ^a   Camiade, M ^b   Nallatamby, J C ^a   Valenza, M ^c   Prigent, M ^a   Obregon, J ^a  

^a Centre National de la Recherche Scientifique   (France)

^b UMS   (France)

^c UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOBILE ELECTRONIC EQUIPMENT; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RADAR CIRCUITS; SCATTERING PARAMETERS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; VARIABLE FREQUENCY OSCILLATORS;

AUTOMOTIVE RADAR; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035692732     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.966921     Document Type: Article

References (8)

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