Indium tin oxide films with low resistivity and low internal stress

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 4, 2003, Pages 1351-1354

  Takayama, Shinji ^a   Sugawara, Toshifumi ^a   Tanaka, Akira ^a   Himuro, Tokuji ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON MOBILITY; GLASS; HALL EFFECT; MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; PRESSURE; SEMICONDUCTING INDIUM COMPOUNDS; STRESSES; SUBSTRATES;

DC MAGNETRON SPUTTERING; INDIUM TIN OXIDE FILM; INTERNAL STRESS; OXYGEN GAS ANNEALING; POSTANNEALING TREATMENT;

THIN FILMS;

EID: 0042029697     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1563623     Document Type: Article

References (5)

1. L. J. Meng and M. P. Dos Santos, Thin Solid Films 289, 65 (1996).
2. H. Schmitt, K. Carl, and I. Friedrich, Thin Solid Films 295, 151 (1997).
3. M. Bender, W. Seelig, C. Daube, H. Frankenberger, B. Ocker, and J. Stollenwerk, Thin Solid Films 326, 72 (1998).
4. W. Wu, B. Chiou, and S. T. Hsieh, Semicond. Sci. Technol. 9, 1242 (1994).
5. G. Frank and H. Kostlin, Appl. Phys. A: Solids Surf. 27, 197 (1982).