Interface reactions and electrical properties of metal contacts (Ti, In, Au, W) on p-ZnSe

Semiconductor Science and Technology

Volumn 13, Issue 2, 1998, Pages 236-240

  Goesmann, Fred ^a   Mölle, Matthias ^a   Studnitzky, Thomas ^a   Schmid Fetzer, Rainer ^a  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042024354     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/2/014     Document Type: Article

References (6)

1. Fijol J J, Calhoun L C, Park R M and Holloway P H 1995 Au and Ag electrical contacts to p-ZnSe J. Electron. Mater. 24 143-50
2. Einfeldt S, Behringer M, Nürnberger J, Heinke H, Behr T, Becker C R, Hommel D and Landwehr G 1995 Electrical contacts to p-ZnSe based on HgSe and ZnSe Phys. Status Solidi 187 439-50
3. Bhanumurthy K and Schmid-Fetzer R 1996 Solid-state reaction bonding of silicon carbide (HIP-SiC) below 1000 °C Mater. Sci. Eng. A 220 35-40
4. Schwarz R, Molle M, Studnitzky T, Goesmann F and Schmid-Fetzer R 1997 Experimental study of ternary M-Zn-Se (M = W, Au, In, Ti) phase equilibria J. Alloys Compounds 247 158-63
5. Schwarz R, Studnitzky T, Goesmann F and Schmid-Fetzer R Ohmic contacts to p-ZnSe using Pd metallisation Solid State Electron. accepted
6. Goesmann F, Studnitzky T and Schmid-Fetzer R Experimental study of ternary Pd-Zn-Se phase equilibria and Pd/ZnSe bulk diffusion J. Phase Equilibria submitted