Effect of the Ti/TiN bilayer barrier and its surface treatment on the reliability of a Ti/TiN/AlSiCu/TiN contact metallization

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 6, 1996, Pages 3502-3508

  Quellet, L ^a   Tremblay, Y ^a   Gagnon, G ^b   Caron, M ^b   Currie, J F ^b   Gujrathi, S C ^b   Biberger, M ^c  

^a Mitel Networks Corporation   (Canada)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^c VARIAN MEDICAL SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042007360     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (26)

1. L. Quellet, R. Reynolds, and Y. K. Kim, 1992 Semicon Korea, Seoul, Korea (unpublished).
2. M. Biberger, L. Ouellet, and G. Tkach, Challenges of ULSI Interconnect Systems Symposium, San Jose, September 15, 1993 (unpublished).
3. L. Ouellet, M. Biberger, and G. Tkach, in Proceedings of the 2nd International Symposium on Sputtering Processes, Tokyo, Japan, 27-28 May, 1993 (unpublished).
4. L. Ouellet, M. Biberger, and G. Tkach, Semicon West, San Francisco, CA, July 1993.
5. M. Ismeurt and R. Reynolds, ULSI U.C. Berkeley Conference, Berkeley, CA, 4-6 October, 1994 (unpublished).
6. J. Schlueter, B. Jones, C. K. Huang, L. Quellet, M. Biberger, S. Jackson, and G. Tkach, ULSI U.C. Berkeley Conference, Berkeley, CA, 4-6 October, 1994 (unpublished).
7. L. Ouellet, Y. Tremblay, G. Gagnon, M. Caron, J. F. Currie, S. C. Gujrathi, and M. Biberger, J. Vac. Sci. Technol. B 14, 2627 (1996).
8. S. J. Proctor, L. W. Linholm, and J. A. Mazer, IEEE Trans. Electron. Devices ED-39, 1535 (1983).
9. M. Hansen, Constitution of Binary Alloys (McGraw-Hill, New York, 1958), p. 131.
10. J. O. McCaldin and H. Sankur, Appl. Phys. Lett. 19, 524 (1971).
11. D. Pramanik and A. N. Saxena, Solid State Technol. Jan. 127 (1983).
12. R. Beyers and R. Sinclair, J. Appl. Phys. 57, 5240 (1985).
13. A. M. Edwards, Y. Dao, R. J. Nemanich, and D. E. Sayers, J. Appl. Phys. 80, 183 (1996).
14. A. I. Barg, B. S. Bokstein, and L. M. Klinger, J. Appl. Phys. 72, 1356 (1992).
15. H. Jeon, C. A. Sukow, J. W. Honeycutt, G. A. Rozgonyi, and R. J. Nemanich, J. Appl. Phys. 71, 4269 (1992).
16. Y. L. Corcoran, A. H. King, N. de Lanerolle, and B. Kim, J. Electron. Mater. 19, 1177 (1990).
17. C. A. Pico and M. G. Lagally, J. Appl. Phys. 64, 4957 (1988).
18. T. P. Nolan, R. Sinclair, and R. Beyers, J. Appl. Phys. 71, 720 (1992).
19. T. Brat, C. M. Osburn, T. Finstad, J. Liu, and B. Ellington, J. Electrochem. Soc. 133, 1451 (1986).
20. T. P. Chow, W. Katz, R. Goehner, and G. Smith, J. Electrochem. Soc. 132, 1915 (1985).
21. H. R. Liauh, M. C. Chen, J. F. Chen, and L. J. Chen, J. Appl. Phys. 74, 2590 (1993).
22. J. Amano, K. Nauka, M. P. Scott, J. E. Turner, and R. Tsai, Appl. Phys. Lett. 49, 737 (1986).
23. G. Gagnon, S. C. Gujrathi, M. Caron, J. F. Currie, Y. Tremblay, L. Ouellet, M. Biberger, and R. Reynolds, J. Appl. Phys. 80, 188 (1996).
24. H. Windischmann, J. Appl. Phys. 62, 1800 (1987).
25. M. Biberger, M. Rumer, G. Tkach, and L. Quellet (unpublished).
26. M. Heintze, A. Catana, P. E. Schmid, F. Lévy, P. Stadelmann, and P. Weiss, J. Phys. D 23, 1076 (1990).