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Volumn 14, Issue 4, 1996, Pages 2627-2636

The effect of the Ti glue layer in an integrated Ti/TiN/Ti/AlSiCu/TiN contact metallization process

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0043009065     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588997     Document Type: Article
Times cited : (9)

References (15)
  • 3
    • 24644434706 scopus 로고
    • The PVD Ti/TiN Solution for 0.35 μm Contact Holes with Aspect Ratio Larger than 3.0
    • Tokyo, Japan, May 27-28
    • L. Quellet, M. Biberger, and G. Tkach, The PVD Ti/TiN Solution for 0.35 μm Contact Holes with Aspect Ratio Larger than 3.0, 2nd International Symposium on Sputtering Processes, Tokyo, Japan, May 27-28, 1993.
    • (1993) 2nd International Symposium on Sputtering Processes
    • Quellet, L.1    Biberger, M.2    Tkach, G.3
  • 5
    • 24644511932 scopus 로고
    • An In-Situ Reactively Sputtered Composite TiN Barrier for Use with Multilevel, Hot Al Fill; 0.7 μm to 0.5 μm Logic Devices
    • Berkeley, CA, October 4-6
    • M. Ismeurt and R. Reynolds, An In-Situ Reactively Sputtered Composite TiN Barrier for Use with Multilevel, Hot Al Fill; 0.7 μm to 0.5 μm Logic Devices, ULSI U.C. Berkeley Conference, Berkeley, CA, October 4-6, 1994.
    • (1994) ULSI U.C. Berkeley Conference
    • Ismeurt, M.1    Reynolds, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.