-
1
-
-
0141775174
-
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
-
Canham, L. T., Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers, Appl. Phys. Lett., 1990, 57 (10): 1046-1048.
-
(1990)
Appl. Phys. Lett.
, vol.57
, Issue.10
, pp. 1046-1048
-
-
Canham, L.T.1
-
3
-
-
24444438261
-
x I. Atomic structural models
-
x I. Atomic structural models. Phys. Rev. B, 1982, 26: 6610-6621.
-
(1982)
Phys. Rev. B
, vol.26
, pp. 6610-6621
-
-
Ching, W.Y.1
-
5
-
-
17144442328
-
Structure of high-photosensitivity silicon-oxygen alloy films
-
Watanabe, H., Haga, K., Lohner, T., Structure of high-photosensitivity silicon-oxygen alloy films, J. Non-Cryst. Solids, 1993, 164-166: 1085-1088.
-
(1993)
J. Non-cryst. Solids
, vol.164-166
, pp. 1085-1088
-
-
Watanabe, H.1
Haga, K.2
Lohner, T.3
-
6
-
-
36749111204
-
Electrical conductivity of semi-insulating polycrystalline silicon and its dependence upon oxygen content
-
Ni, J., Arnold, E., Electrical conductivity of semi-insulating polycrystalline silicon and its dependence upon oxygen content, Appl. Phys. Lett., 1987, 39: 554-556.
-
(1987)
Appl. Phys. Lett.
, vol.39
, pp. 554-556
-
-
Ni, J.1
Arnold, E.2
-
7
-
-
0000089589
-
Physical properties of semi-insulating polycrystalline silicon I. Structure, electronics properties and electrical conductivity
-
Bruesch, P., Stockmeier, Th, Stucki, F. et al., Physical properties of semi-insulating polycrystalline silicon I. Structure, electronics properties and electrical conductivity, J. Appl. Phys., 1993, 73: 7677-7689.
-
(1993)
J. Appl. Phys.
, vol.73
, pp. 7677-7689
-
-
Bruesch, P.1
Stockmeier, Th.2
Stucki, F.3
-
8
-
-
21144466971
-
Titanium and tantalum coatings on aluminum nitride
-
Carter, W. B., Papageorge, M. V., Titanium and tantalum coatings on aluminum nitride, J. Vac. Sci. Technol. A, 1992, 10: 3460-3464.
-
(1992)
J. Vac. Sci. Technol. A
, vol.10
, pp. 3460-3464
-
-
Carter, W.B.1
Papageorge, M.V.2
-
9
-
-
0003472812
-
-
Reading, MA: Addison-Wesley
-
Warren, B. E., X-ray Diffraction, Reading, MA: Addison-Wesley, 1969, 258-262.
-
(1969)
X-ray Diffraction
, pp. 258-262
-
-
Warren, B.E.1
-
10
-
-
0342717271
-
Observation of Si-2p level shift in hydrogenated amorphous silicon by X-ray photoelectric spectroscopy
-
Usami, K., Shimada, T., Katayama, Y., Observation of Si-2p level shift in hydrogenated amorphous silicon by X-ray photoelectric spectroscopy, Jpn. J. Appl. Phys., 1980, 19: L389-391.
-
(1980)
Jpn. J. Appl. Phys.
, vol.19
-
-
Usami, K.1
Shimada, T.2
Katayama, Y.3
-
12
-
-
0030151904
-
2/Si system and correlation with metal-oxide-semiconductor device characteristics
-
2/Si system and correlation with metal-oxide-semiconductor device characteristics, J. Appl. Phys., 1996, 79: 6653-6713.
-
(1996)
J. Appl. Phys.
, vol.79
, pp. 6653-6713
-
-
Iwata, S.1
Ishizaka, A.2
-
13
-
-
0000231966
-
Direct observation of the layer-by-layer growth of initial oxide layers on Si (100) surface during thermal oxidation
-
Borman, V. D., Gasev, E. P., Lebedinskii, Yu Yu et al., Direct observation of the layer-by-layer growth of initial oxide layers on Si (100) surface during thermal oxidation, Phys. Rev. Lett., 1991, 67: 2387-2390.
-
(1991)
Phys. Rev. Lett.
, vol.67
, pp. 2387-2390
-
-
Borman, V.D.1
Gasev, E.P.2
Lebedinskii, Yu.Yu.3
-
14
-
-
0000539236
-
Multiple-bonding configuration for oxygen on silicon surfaces
-
Hollinger, G., Himpsel, F. J., Multiple-bonding configuration for oxygen on silicon surfaces, Phys. Rev. B, 1983, 28: 3651 -3653.
-
(1983)
Phys. Rev. B
, vol.28
, pp. 3651-3653
-
-
Hollinger, G.1
Himpsel, F.J.2
-
18
-
-
0000332717
-
Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposited
-
Voutsaa, A. T., Hatilis, M. K., Boyce, J. et al., Raman spectroscopy of amorphous and microcrystalline silicon films deposited by low-pressure chemical vapor deposited, J. Appl. Phys., 1995, 78(12): 6999-7006.
-
(1995)
J. Appl. Phys.
, vol.78
, Issue.12
, pp. 6999-7006
-
-
Voutsaa, A.T.1
Hatilis, M.K.2
Boyce, J.3
-
19
-
-
0026415452
-
Structural order in amorphous silicon and its alloys: Raman spectra and optical gap
-
Sokolov, A. P., Shebanin, A. P., Golikova, O. A. et al., Structural order in amorphous silicon and its alloys: Raman spectra and optical gap, J. Non-cryst. Solids, 1991, 137&138: 99-102.
-
(1991)
J. Non-cryst. Solids
, vol.137-138
, pp. 99-102
-
-
Sokolov, A.P.1
Shebanin, A.P.2
Golikova, O.A.3
-
21
-
-
0001031218
-
Structural information from the Raman spectrum of amorphous silicon
-
Beeman, D., Tsu, R., Tporpe, M. F., Structural information from the Raman spectrum of amorphous silicon, Phy. Rev. B, 1985, 32: 874-878.
-
(1985)
Phy. Rev. B
, vol.32
, pp. 874-878
-
-
Beeman, D.1
Tsu, R.2
Tporpe, M.F.3
-
22
-
-
0029733914
-
Structural and optical properties of amorphous silicon oxynitride
-
Yeh, J. L., Lee, S. C., Structural and optical properties of amorphous silicon oxynitride. J. Appl. Phys., 1996, 79(2): 656-663.
-
(1996)
J. Appl. Phys.
, vol.79
, Issue.2
, pp. 656-663
-
-
Yeh, J.L.1
Lee, S.C.2
-
23
-
-
0032621365
-
Adjustable emission for silicon-rich oxide films prepared by plasma enhanced chemical vapor deposition
-
Tong, J. F., Hsiao, H. L., Hwang, H. L., Adjustable emission for silicon-rich oxide films prepared by plasma enhanced chemical vapor deposition, Appl. Phys. Lett., 1999, 74(16): 2316-2318.
-
(1999)
Appl. Phys. Lett.
, vol.74
, Issue.16
, pp. 2316-2318
-
-
Tong, J.F.1
Hsiao, H.L.2
Hwang, H.L.3
-
25
-
-
24844469256
-
Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films
-
Lucovsky, G., Yang, J., Chao, S. S. et al., Oxygen-bonding environments in glow-discharge-deposited amorphous silicon-hydrogen alloy films, Phys. Rev. B, 1983, 28(6): 3225-3233.
-
(1983)
Phys. Rev. B
, vol.28
, Issue.6
, pp. 3225-3233
-
-
Lucovsky, G.1
Yang, J.2
Chao, S.S.3
-
26
-
-
0018435356
-
Chemical effects of the frequencies of Si-H vibration in amorphous solids
-
Lucovsky, G., Chemical effects of the frequencies of Si-H vibration in amorphous solids, Solid State Commun., 1979, 29: 571-576.
-
(1979)
Solid State Commun.
, vol.29
, pp. 571-576
-
-
Lucovsky, G.1
|