Low-noise SOI hall devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5115, Issue , 2003, Pages 196-203

  Haddab, Y ^a,d   Mosser, V ^a   Lysowec, M ^a   Suski, J ^b   Demeus L ^c   Renaux, C ^c   Adriaensen, S ^c   Flandre, D ^c  

^a Utilities Technology Group   (France)

^b SCHLUMBERGER   (United States)

^c UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^d Wavecom SA   (France)

Author keywords

2D conduction; Hall cross; Hall effect; LOCOS; Low frequency noise; Noise reduction; Sensors; Shape effect; SOI technology

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ETCHING; HALL EFFECT; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SPURIOUS SIGNAL NOISE; THIN FILMS;

HALL SENSOR; LOW-FREQUENCY NOISE; SHAPE EFFECT;

HALL EFFECT DEVICES;

EID: 0041823277     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.490185     Document Type: Conference Paper

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