High sensitivity semiconductor NO2 gas sensor based on mesoporous WO3 thin film

Electrochemical and Solid-State Letters

Volumn 6, Issue 8, 2003, Pages

  Teoh, L G ^a   Hung, I M ^a   Shieh, J ^b   Lai, W H ^a   Hon, M H ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

MESOPOROUS MATERIALS; NITROGEN COMPOUNDS; SEMICONDUCTOR DEVICES; THERMAL EFFECTS; THIN FILMS; TUNGSTEN COMPOUNDS;

OPERATING TEMPERATURE;

CHEMICAL SENSORS;

EID: 0041766211     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1585252     Document Type: Article

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