-
3
-
-
0001017453
-
Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy
-
Zhang R., Kuech T.F. Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy. Appl. Phys. Lett. 72:1998;1611-1613.
-
(1998)
Appl. Phys. Lett.
, vol.72
, pp. 1611-1613
-
-
Zhang, R.1
Kuech, T.F.2
-
4
-
-
0346346574
-
Optical Characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
-
Martínez-Criado G., Cros A., Cantarero A., Dimitrov R., Ambacher O., Stutzmann M. Optical Characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition. J. Appl. Phys. 88:2000;3470-3478.
-
(2000)
J. Appl. Phys.
, vol.88
, pp. 3470-3478
-
-
Martínez-Criado, G.1
Cros, A.2
Cantarero, A.3
Dimitrov, R.4
Ambacher, O.5
Stutzmann, M.6
-
5
-
-
21544444614
-
Groqth of gallium nitride by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy: The role of charged species
-
Molnar R.J., Moustakas T.D. Groqth of gallium nitride by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy: the role of charged species. J. Appl. Phys. 76:1994;4587-4595.
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 4587-4595
-
-
Molnar, R.J.1
Moustakas, T.D.2
-
6
-
-
25344462099
-
Mn - Related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy
-
Korotkov R.Y., Gregie J.M., Wessels B.W. Mn - related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy. Physica B. 30:2001;308-310.
-
(2001)
Physica B
, vol.30
, pp. 308-310
-
-
Korotkov, R.Y.1
Gregie, J.M.2
Wessels, B.W.3
-
11
-
-
4444275918
-
Magnetic and optical properties of GaMnN magnetic semiconductor
-
Zajac M., Doradzinzki R., Gosk J., Szczytko J., Lefeld-Sosnowska M., Kaminska M., Twardowski A., Palczewska M., Graz E., Gebicki W. Magnetic and optical properties of GaMnN magnetic semiconductor. Appl. Phys. Lett. 78:2001;1276-1278.
-
(2001)
Appl. Phys. Lett.
, vol.78
, pp. 1276-1278
-
-
Zajac, M.1
Doradzinzki, R.2
Gosk, J.3
Szczytko, J.4
Lefeld-Sosnowska, M.5
Kaminska, M.6
Twardowski, A.7
Palczewska, M.8
Graz, E.9
Gebicki, W.10
-
14
-
-
79955987860
-
Role of the defects centers in recombination processes in GaN monocrystals
-
Joshi N.V., Cros A., Cantarero A., Medina H., Ambacher O., Stuzman M. Role of the defects centers in recombination processes in GaN monocrystals. Appl. Phys. Lett. 80:2002;2824-2827.
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 2824-2827
-
-
Joshi, N.V.1
Cros, A.2
Cantarero, A.3
Medina, H.4
Ambacher, O.5
Stuzman, M.6
-
17
-
-
0023457257
-
A model for the 2.1 eV emission band in Zn 1-x Mn x S
-
Roa L., Vincent A.B., Joshi N.V. A model for the 2.1 eV emission band in Zn 1-x Mn x S. Solid State. Commun. 64:1987;793-795.
-
(1987)
Solid State. Commun.
, vol.64
, pp. 793-795
-
-
Roa, L.1
Vincent, A.B.2
Joshi, N.V.3
-
18
-
-
0042828110
-
Potential material for electroluminescence devices in the visible region
-
Joshi N.V., Ray S., Menk G. Potential material for electroluminescence devices in the visible region. Appl. Phys. Lett. 47:1985;1108-1109.
-
(1985)
Appl. Phys. Lett.
, vol.47
, pp. 1108-1109
-
-
Joshi, N.V.1
Ray, S.2
Menk, G.3
|