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Volumn 64, Issue 9-10, 2003, Pages 1685-1689

Mid gap photoluminescence from GaN:Mn, a magnetic semiconductor

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; FLUORESCENCE; MAGNETIC SEMICONDUCTORS; MORPHOLOGY; PHOTOLUMINESCENCE;

EID: 0041736536     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3697(03)00070-2     Document Type: Conference Paper
Times cited : (4)

References (18)
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    • Zhang R., Kuech T.F. Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy. Appl. Phys. Lett. 72:1998;1611-1613.
    • (1998) Appl. Phys. Lett. , vol.72 , pp. 1611-1613
    • Zhang, R.1    Kuech, T.F.2
  • 4
    • 0346346574 scopus 로고    scopus 로고
    • Optical Characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
    • Martínez-Criado G., Cros A., Cantarero A., Dimitrov R., Ambacher O., Stutzmann M. Optical Characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition. J. Appl. Phys. 88:2000;3470-3478.
    • (2000) J. Appl. Phys. , vol.88 , pp. 3470-3478
    • Martínez-Criado, G.1    Cros, A.2    Cantarero, A.3    Dimitrov, R.4    Ambacher, O.5    Stutzmann, M.6
  • 5
    • 21544444614 scopus 로고
    • Groqth of gallium nitride by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy: The role of charged species
    • Molnar R.J., Moustakas T.D. Groqth of gallium nitride by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy: the role of charged species. J. Appl. Phys. 76:1994;4587-4595.
    • (1994) J. Appl. Phys. , vol.76 , pp. 4587-4595
    • Molnar, R.J.1    Moustakas, T.D.2
  • 6
    • 25344462099 scopus 로고    scopus 로고
    • Mn - Related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy
    • Korotkov R.Y., Gregie J.M., Wessels B.W. Mn - related absorption and PL bands in GaN grown by metal organic vapor phase epitaxy. Physica B. 30:2001;308-310.
    • (2001) Physica B , vol.30 , pp. 308-310
    • Korotkov, R.Y.1    Gregie, J.M.2    Wessels, B.W.3
  • 16
    • 3442886901 scopus 로고    scopus 로고
    • Inversion Domain and Stacking Mismatch Boundaries in GaN
    • Northrup J.E., Neugebauer J., Romano T.L. Inversion Domain and Stacking Mismatch Boundaries in GaN. Phys. Rev. Lett. 77:1996;103-106.
    • (1996) Phys. Rev. Lett. , vol.77 , pp. 103-106
    • Northrup, J.E.1    Neugebauer, J.2    Romano, T.L.3
  • 17
    • 0023457257 scopus 로고
    • A model for the 2.1 eV emission band in Zn 1-x Mn x S
    • Roa L., Vincent A.B., Joshi N.V. A model for the 2.1 eV emission band in Zn 1-x Mn x S. Solid State. Commun. 64:1987;793-795.
    • (1987) Solid State. Commun. , vol.64 , pp. 793-795
    • Roa, L.1    Vincent, A.B.2    Joshi, N.V.3
  • 18
    • 0042828110 scopus 로고
    • Potential material for electroluminescence devices in the visible region
    • Joshi N.V., Ray S., Menk G. Potential material for electroluminescence devices in the visible region. Appl. Phys. Lett. 47:1985;1108-1109.
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 1108-1109
    • Joshi, N.V.1    Ray, S.2    Menk, G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.