A unified model for high-frequency current noise of MOSFETs

Solid-State Electronics

Volumn 47, Issue 11, 2003, Pages 2043-2048

  Teng, Heng Fa ^a   Jang, Sheng Lyang ^a   Juang, M H ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

High frequency noise; Induced gate noise; MOSFETs; Subthreshold region; Thermal noise

Indexed keywords

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; SPURIOUS SIGNAL NOISE;

GATE NOISE MODEL;

MOSFET DEVICES;

EID: 0041728785     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00248-X     Document Type: Article

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