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Volumn 2, Issue 7, 2002, Pages 713-716

Creating Nanoscale Patterns of Dendrimers on Silicon Surfaces with Dip-Pen Nanolithography

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Indexed keywords


EID: 0041684552     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl020247p     Document Type: Article
Times cited : (104)

References (18)
  • 16
    • 0346846315 scopus 로고    scopus 로고
    • Loaded silicon nitride tips (Thermomicroscopes, triangular, spring constant 0.06 N/m) were prepared by immersion in a 10 μM ethanolic solution of dendrimer (Aldrich, U.K.) for 5 s and then left to air-dry for 5 min prior to use. Si(100) wafers were used as supplied from Compart Technology, U.K.
    • Loaded silicon nitride tips (Thermomicroscopes, triangular, spring constant 0.06 N/m) were prepared by immersion in a 10 μM ethanolic solution of dendrimer (Aldrich, U.K.) for 5 s and then left to air-dry for 5 min prior to use. Si(100) wafers were used as supplied from Compart Technology, U.K.
  • 17
    • 0346846314 scopus 로고    scopus 로고
    • Experiments were conducted using an Eastcoast Scientific AFM, with a quadrant photodetector allowing simultaneous topographic and friction force measurements. Contact mode AFM was performed in air at 19.5 ± 0.5 °C and relative humidity of 52 ± 2%.
    • Experiments were conducted using an Eastcoast Scientific AFM, with a quadrant photodetector allowing simultaneous topographic and friction force measurements. Contact mode AFM was performed in air at 19.5 ± 0.5 °C and relative humidity of 52 ± 2%.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.