Proton implantation of the power MOSFET to improve its built-in diode reverse recovery

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 321-324

  Zhu, Ronghua ^a   Chow, T Paul ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; POWER ELECTRONICS; PROTONS; SEMICONDUCTOR DIODES;

PROTON IMPLANTATION;

MOSFET DEVICES;

EID: 0031633230     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)