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Volumn 2, Issue , 2003, Pages 901-906

Towards a sensorless current and temperature monitoring in MOSFET-based H-bridge

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC CURRENT MEASUREMENT; ELECTRIC INVERTERS; ELECTRIC RESISTANCE MEASUREMENT; POWER CONVERTERS; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE DISTRIBUTION; THERMAL EFFECTS; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

EID: 0041656283     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (12)

References (9)
  • 1
    • 0034473295 scopus 로고    scopus 로고
    • An estimation method of the channel temperature of power MOS devices
    • Galway
    • D. Bergogne, B. Allard, H. Morel, "An estimation method of the channel temperature of power MOS devices", Proceedings of the PESC'00 conference, Galway, 2000, pp 1594-1599.
    • (2000) Proceedings of the PESC'00 Conference , pp. 1594-1599
    • Bergogne, D.1    Allard, B.2    Morel, H.3
  • 2
    • 0034794214 scopus 로고    scopus 로고
    • Application of averaged models to real-time monitoring of power converters
    • Vancouver
    • B. Allard, H. Morel, K. Ammous, et al., "Application of averaged Models to Real-Time Monitoring of Power Converters", Proceedings of the PESC'01 conference, Vancouver, pp 486 -491, vol.2.
    • Proceedings of the PESC'01 Conference , vol.2 , pp. 486-491
    • Allard, B.1    Morel, H.2    Ammous, K.3
  • 3
    • 0031646746 scopus 로고    scopus 로고
    • Transient temperature measurements and modelling of IGBT's under short circuit
    • A. Ammous, B. Allard, H. Morel, "Transient Temperature Measurements and Modelling of IGBT's under Short Circuit", IEEE Trans. on Power Electronics, Vol. 13, NO. 1, pp 12-25, 1998
    • (1998) IEEE Trans. on Power Electronics , vol.13 , Issue.1 , pp. 12-25
    • Ammous, A.1    Allard, B.2    Morel, H.3
  • 5
    • 0033101248 scopus 로고    scopus 로고
    • Instantaneous junction temperature evaluation of high power diodes (thyristors) during current transients
    • F. Profumo, A. Tenconi, S. Facelli, B. Passerini, "instantaneous Junction Temperature Evaluation of High Power Diodes (Thyristors) During Current Transients", IEEE Trans. On Power Electronics, Vol. 14, NO. 2, March 1999, p 292-299
    • (1999) IEEE Trans. On Power Electronics , vol.14 , Issue.2 , pp. 292-299
    • Profumo, F.1    Tenconi, A.2    Facelli, S.3    Passerini, B.4
  • 7
    • 0017908616 scopus 로고
    • High level behavior of power rectifiers: A quantitative analysis of the forward voltage drop
    • January
    • A. Muñoz-Yagüe, P. Leturcq, "High Level Behavior of Power Rectifiers: A Quantitative Analysis of the Forward Voltage Drop", IEEE Trans. On Electron Devices, Vol. ED25, NO 1, January 1978
    • (1978) IEEE Trans. On Electron Devices , vol.ED25 , Issue.1
    • Muñoz-Yagüe, A.1    Leturcq, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.