Instantaneous junction temperature evaluation of high-power diodes (thyristors) during current transients

IEEE Transactions on Power Electronics

Volumn 14, Issue 2, 1999, Pages 292-299

  Profumo, Francesco ^a,b   Tenconi, Alberto ^b   Facelli, Simone ^c   Passerini, Bruno ^c  

^a IEEE   (Italy)

^b POLITECNICO DI TORINO   (Italy)

^c International Rectifier Corporation Italiana   (Italy)

Author keywords

Power electronic device; Thermal model

Indexed keywords

COMPUTER SIMULATION; ELECTRIC IMPEDANCE; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; THERMAL STRESS; TRANSFER FUNCTIONS; TRANSIENTS; WAVEFORM ANALYSIS;

HIGH-POWER DIODES; INSTANTANEOUS JUNCTION TEMPERATURE EVALUATIONS; TRANSIENT THERMAL IMPEDANCE CURVES; VOLTAGE DROPS;

THYRISTORS;

EID: 0033101248     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.750182     Document Type: Review

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