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Volumn 440, Issue 1-2, 2003, Pages 78-86

The process window for diamond deposition from the vapor phase with sulfur in the C-H-O feed gas mixtures

Author keywords

Chemical vapor deposition; Diamond; Reaction kinetics; Sulfur

Indexed keywords

BINDING ENERGY; DIAMONDS; PHASE COMPOSITION; REACTION KINETICS; SUPERSATURATION; VAPOR PHASE EPITAXY;

EID: 0041620677     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00837-X     Document Type: Article
Times cited : (4)

References (19)
  • 11
    • 78751622594 scopus 로고    scopus 로고
    • web version
    • National Institute of Standards and Technology chemical kinetics database, Standard Reference Database 17, Version 7.0 (web version), http://kinetics.nist.gov.
    • Standard Reference Database 17, Version 7.0
  • 12
    • 0042887361 scopus 로고    scopus 로고
    • Ph.D. Thesis, Department of Chemistry, University of Bristol, United Kingdom
    • R.S. Tsang, Ph.D. Thesis, Department of Chemistry, University of Bristol, United Kingdom, 1997.
    • (1997)
    • Tsang, R.S.1
  • 14
    • 0028756035 scopus 로고
    • C.H. Carter Jr., G. Gildenblat, S. Nakamura, R. J. Nemanich (Eds.), Diamond SiC and Nitride Wide Bandgap Semiconductors, San Francisco, USA, April 4-8, 1994
    • P.K. Bachmann, H. J. Hagemann, H. Late, in: C.H. Carter Jr., G. Gildenblat, S. Nakamura, R. J. Nemanich (Eds.), Diamond SiC and Nitride Wide Bandgap Semiconductors, San Francisco, USA, April 4-8, 1994, Materials Research Society Symposium Proceeding 339 (1994) 267.
    • (1994) Materials Research Society Symposium Proceeding , vol.339 , pp. 267
    • Bachmann, P.K.1    Hagemann, H.J.2    Late, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.