-
1
-
-
0030126353
-
MSM photodiodes
-
Berger P.R. MSM photodiodes. IEEE Potentials. (April/May):1996;25.
-
(1996)
IEEE Potentials
, Issue.APRIL-MAY
, pp. 25
-
-
Berger, P.R.1
-
2
-
-
0025453655
-
High-speed GaAs/AlGaAs optoelectronic devices for computer applications
-
Harder Ch.S., Van Zeghbroeck B.J., Kesler M.P., Meier H.P., Vettiger P., Webb D.J.et al. High-speed GaAs/AlGaAs optoelectronic devices for computer applications. IBM J. Res. Develop. 34(4):1990;568.
-
(1990)
IBM J. Res. Develop.
, vol.34
, Issue.4
, pp. 568
-
-
Harder, Ch.S.1
Van Zeghbroeck, B.J.2
Kesler, M.P.3
Meier, H.P.4
Vettiger, P.5
Webb, D.J.6
-
3
-
-
0032304775
-
High-frequency response of metal-semiconductor-metal photodetectors limited by dynamic and recombination effects
-
Khmyrova I., Ryzhii M., Willander M. High-frequency response of metal-semiconductor-metal photodetectors limited by dynamic and recombination effects. Jpn. J. Appl. Phys. 37:1998;6352.
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, pp. 6352
-
-
Khmyrova, I.1
Ryzhii, M.2
Willander, M.3
-
4
-
-
0025235975
-
Properties and design theory of ultrafast GaAs metal-semiconductor-metal photodetector with symmetrical Schottky contacts
-
Nakajima K., Iida T., Sugimoto K., Kan H., Mizushima Y. Properties and design theory of ultrafast GaAs metal-semiconductor-metal photodetector with symmetrical Schottky contacts. IEEE Trans. ED. 37:1990;31.
-
(1990)
IEEE Trans. ED
, vol.37
, pp. 31
-
-
Nakajima, K.1
Iida, T.2
Sugimoto, K.3
Kan, H.4
Mizushima, Y.5
-
5
-
-
0035300767
-
GaN and InGaN metal-semiconductor-metal photodetectros with different Schottky contact metals
-
Su Y.K., Chiou Y.Z., Juang F.S., Chang S.J., Sheu J.K. GaN and InGaN metal-semiconductor-metal photodetectros with different Schottky contact metals. Jpn. J. Appl. Phys., Part 1. 40:2001;2996.
-
(2001)
Jpn. J. Appl. Phys., Part 1
, vol.40
, pp. 2996
-
-
Su, Y.K.1
Chiou, Y.Z.2
Juang, F.S.3
Chang, S.J.4
Sheu, J.K.5
-
7
-
-
0025474097
-
Lateral high-speed metal-semiconductor-metal photodiodes on high-resistivity InGaAs
-
Wei C.J., Boettcher E.H., Bimberg D., Kuphal E. Lateral high-speed metal-semiconductor-metal photodiodes on high-resistivity InGaAs. IEEE ED Lett. 11(8):1990;334.
-
(1990)
IEEE ED Lett.
, vol.11
, Issue.8
, pp. 334
-
-
Wei, C.J.1
Boettcher, E.H.2
Bimberg, D.3
Kuphal, E.4
-
8
-
-
0035278089
-
Geometry optimization of interdigitated Schottky-barrier metal-semiconductor-metal photodiode structures
-
Averine S.V., Chan Y.C., Lam Y.L. Geometry optimization of interdigitated Schottky-barrier metal-semiconductor-metal photodiode structures. Solid-State Electron. 45:2001;441.
-
(2001)
Solid-State Electron.
, vol.45
, pp. 441
-
-
Averine, S.V.1
Chan, Y.C.2
Lam, Y.L.3
-
9
-
-
84957320841
-
Low dark current and high-speed metal-semiconductor-metal photodetector on sulfer-treated InP
-
Han I.K., Her J., Byun Y.T., Lee S., Woo D.H., Lee J.L.et al. Low dark current and high-speed metal-semiconductor-metal photodetector on sulfer-treated InP. Jpn. J. Appl. Phys. 33:1994;6454.
-
(1994)
Jpn. J. Appl. Phys.
, vol.33
, pp. 6454
-
-
Han, I.K.1
Her, J.2
Byun, Y.T.3
Lee, S.4
Woo, D.H.5
Lee, J.L.6
-
10
-
-
0034499171
-
Optical response of planar Mo/n-Si/Mo structures with long neutral region and Schottky barriers at both ends
-
Takano H., Kimura H., Ando T., Niemcharoen S., Yasumura Y., Sato K. Optical response of planar Mo/n-Si/Mo structures with long neutral region and Schottky barriers at both ends. Solid-State Electron. 44:2000;2161.
-
(2000)
Solid-State Electron.
, vol.44
, pp. 2161
-
-
Takano, H.1
Kimura, H.2
Ando, T.3
Niemcharoen, S.4
Yasumura, Y.5
Sato, K.6
-
11
-
-
0035477989
-
Voltage dependence of photocurrent in metal-semiconductor-metal structures under front-illuminated conditions
-
Niemcharoen S., Kobayashi K., Kimura M., Sato K. Voltage dependence of photocurrent in metal-semiconductor-metal structures under front-illuminated conditions. Solid-State Electron. 45:2001;1815.
-
(2001)
Solid-State Electron.
, vol.45
, pp. 1815
-
-
Niemcharoen, S.1
Kobayashi, K.2
Kimura, M.3
Sato, K.4
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