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Volumn 4979, Issue , 2003, Pages 43-50

Scalloping minimization in deep Si etching on unaxis DSE tools

Author keywords

Deep Si etch; Gas switching; MEMS devices; Scallop minimization; Smooth sidewall

Indexed keywords

ETCHING; INDUCTIVELY COUPLED PLASMA; MICROELECTROMECHANICAL DEVICES; OPTIMIZATION; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SUBSTRATES; SWITCHING THEORY;

EID: 0041562467     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.472750     Document Type: Conference Paper
Times cited : (7)

References (8)
  • 1
    • 0042481182 scopus 로고    scopus 로고
    • U.S. Patent No. 5,498,312, March 12
    • F. Laermer and A. Schilp, U.S. Patent No. 5,498,312, March 12, 1996
    • (1996)
    • Laermer, F.1    Schilp, A.2
  • 2
    • 0042481183 scopus 로고    scopus 로고
    • U.S. Patent No. 5,501,893, March 26
    • F. Laermer and A. Schilp, U.S. Patent No. 5,501,893, March 26, 1996.
    • (1996)
    • Laermer, F.1    Schilp, A.2
  • 3
    • 0042481178 scopus 로고    scopus 로고
    • U.S. Patent No. 6,303,512, October 16
    • F. Laermer and A. Schilp, U.S. Patent No. 6,303,512, October 16, 2001.
    • (2001)
    • Laermer, F.1    Schilp, A.2
  • 4
    • 0032753082 scopus 로고    scopus 로고
    • Characterization of a time multiplexed inductively coupled plasma etcher
    • A. Ayon et al. "Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher", J. Electrochem. Soc., 146, 339 (1999).
    • (1999) J. Electrochem. Soc. , vol.146 , pp. 339
    • Ayon, A.1
  • 5
    • 0034229039 scopus 로고    scopus 로고
    • Deceleration of silicon etch rate at high aspect ratios
    • J. Kiihamaki, "Deceleration of silicon etch rate at high aspect ratios", J. Vac. Sci. Technol. A 18, 1385(2000).
    • (2000) J. Vac. Sci. Technol. A , vol.18 , pp. 1385
    • Kiihamaki, J.1
  • 6
    • 0000367079 scopus 로고    scopus 로고
    • Modeling and development of a deep silicon etch process for 200 mm election projection lithography mask fabrication
    • W. Dauksher et al. "Modeling and development of a deep silicon etch process for 200 mm election projection lithography mask fabrication", J. Vac. Sci. Technol. B 19, 2921 (2001).
    • (2001) J. Vac. Sci. Technol. B , vol.19 , pp. 2921
    • Dauksher, W.1
  • 7
    • 23044522692 scopus 로고    scopus 로고
    • 2 and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma source
    • 2 and F-based dry etching for high aspect ratio Si microstructures etched with an inductively coupled plasma source", J. Vac. Sci. Technol. B 18, 1890(2000).
    • (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 1890
    • Tian, W.1
  • 8
    • 0035519156 scopus 로고    scopus 로고
    • Balancing the etching and passivation in time-multiplexed deep dry etching of silicon
    • M. Blauw et al. "Balancing the etching and passivation in time-multiplexed deep dry etching of silicon", J. Vac. Sci. Technol. B 19, 2930(2001).
    • (2001) J. Vac. Sci. Technol. B , vol.19 , pp. 2930
    • Blauw, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.