Gate-length dependence of negative differential resistance in ridge-type InGaAs/InAlAs quantum wire field-effect transistor

Solid-State Electronics

Volumn 45, Issue 7, 2001, Pages 1099-1105

  Kim, Seong Jin ^a   Sugaya, Takeyoshi ^a   Ogura, Mutsuo ^a   Sugiyama, Yoshinobu ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Field effect transistor; Gunn effect; InGaAs; Negative differential resistance; Quantum wire; Short channel effect; Tunneling real space transfer; Velocity overshoot

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GATES (TRANSISTOR); GUNN EFFECT; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES;

NEGATIVE DIFFERENTIAL RESISTANCE (NDR);

FIELD EFFECT TRANSISTORS;

EID: 0035390764     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00141-1     Document Type: Article

References (17)

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