Quantum-interference characteristics of a 25 nm trench-type InGaAs/InAlAs quantum-wire field-effect transistor

Applied Physics Letters

Volumn 80, Issue 3, 2002, Pages 434-436

  Sugaya, T ^a   Bird, J P ^b   Ogura, M ^a   Sugiyama, Y ^a   Ferry, D K ^b   Jang, K Y ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Arizona State University   (United States)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AHARONOV-BOHM EFFECTS; ELECTRON INTERFERENCE; HIGH FIELD; INFLUENCE OF MAGNETIC FIELD; INGAAS/INALAS; SCATTERING RATES; SELECTIVE EPITAXY; SUB-BANDS; THEORETICAL PREDICTION;

ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; MAGNETIC FIELDS; SEMICONDUCTOR QUANTUM WIRES;

WIRE;

EID: 79956012050     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1434304     Document Type: Article

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