Characteristics of new poly-Si thin film transistor with a-Si channel region near the source/drain

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1064-1066

  Jeon, Jae Hong ^a   Park, Cheol Min ^a   Yoo, Juhn Suk ^a   Kim, Cheon Hong ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

A Si (amorphous silicon); Leakage current; Poly Si (polycrystalline silicon); TFT (thin film transistor)

Indexed keywords

EID: 0041424413     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1064     Document Type: Article

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