Continuous index of refraction measurements to 20 GPa in Z-cut sapphire

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2331-2336

  Hayes, D B ^a   Hall, C A ^a   Asay, J R ^a,b   Knudson, M D ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; INTERFACES (MATERIALS); INTERFEROMETERS; INTERFEROMETRY; MAGNETIC FIELD EFFECTS; PARTICLE ACCELERATORS; SAPPHIRE; SINGLE CRYSTALS; SURFACES;

REFRACTION MEASUREMENTS;

REFRACTIVE INDEX;

EID: 0041422235     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1595710     Document Type: Article

References (19)

1. The index of refraction also has the temperature dependence (see Ref. 17). However, in the experiments described here, sapphire is elastically compressed to ∼20 GPa and the associated temperature rise is only about 12 K. So, although density is formally a parameter in this study, the dependence of the measured index of refraction on density is essentially isothermal.
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